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参数资料
| 型号： | 2SK4091-ZK-E2-AY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 封装： | LEAD FREE, MP-3ZK, TO-252, 3 PIN |
| 文件页数： | 8/10页 |
| 文件大小： | 285K |
| 代理商： | 2SK4091-ZK-E2-AY |
Data Sheet D18635EJ1V0DS
5
2SK4091
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
R
DS
(o
n)
-Drai
nto
Sourc
eOn-sta
te
Re
sist
ance
-m
Ω
0
5
10
15
20
25
30
-75
-25
25
75
125
175
10 V
ID = 15 A
Pulsed
VGS = 4.5 V
Tch - Channel Temperature -
°C
C
is
s,
C
os
s,
C
rs
s-
Capacitance
-
pF
10
100
1000
10000
0.1
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage – V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(on
),
t
r,
t
d(o
ff)
,t
f-
S
w
itching
Time
-
ns
1
10
100
0.1
1
10
100
td(off)
td(on)
tf
VDD = 15 V
VGS = 10 V
RG = 3
Ω
tr
ID - Drain Current - A
V
DS
–
Drain
to
S
ource
Voltage
-
V
0
10
20
30
010
20
0
2
4
6
8
10
12
VDS
ID = 30 A
VGS
VDD = 24 V
15 V
6 V
QG – Gate Charge - nC
V
GS
–
Gate
to
Sour
ce
V
oltage
-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F–
Diode
Forward
Current
-
A
0.01
0.1
1
10
100
1000
00.5
11.5
10 V
0 V
Pulsed
VGS = 4.5 V
VF(S-D) – Source to Drain Voltage - V
t
rr–
R
eve
rse
Recovery
Time
-ns
1
10
100
110
100
VGS = 0 V
di/dt = 100 A/
μs
IF – Diode Forward Current - A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4092 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4092-A | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4093 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK4093TZ-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 1A 3-Pin TO-92 Mod Box 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 250V 1A TO-92 |
| 2SK4094 | 功能描述:MOSFET N-CH 60V 100A TO220-3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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