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参数资料
| 型号： | 2SK4114 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SC-67, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 250K |
| 代理商： | 2SK4114 |
2SK4114
2006-10-25
2
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
±10
A
Gate-source breakdown voltage
V (BR) GSS
IG =±10 A, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 720 V, VGS = 0 V
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
4.0
5.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 3 A
2.2
2.5
Forward transfer admittance
Yfs
VDS = 20 V, ID = 3 A
1.5
3.5
S
Input capacitance
Ciss
1150
Reverse transfer capacitance
Crss
20
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
110
pF
Rise time
tr
100
Turn-on time
ton
140
Fall time
tf
40
Switching time
Turn-off time
toff
130
ns
Total gate charge
Qg
25
Gate-source charge
Qgs
11
Gate-drain charge
Qgd
VDD 400 V, VGS = 10 V, ID = 5 A
14
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
15
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
900
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/s
5.4
C
Marking
RL =
66.7
0 V
10 V
VGS
VDD 200 V
ID = 3 A
VOUT
50
Duty <= 1%, tw = 10 s
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K4114
Part No. (or abbreviation code)
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| 2SK4144-S12-AZ | 70 A, 60 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4114(Q,T) | 功能描述:MOSFET MOSFET N-Ch, 600V, 10A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK4115 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
| 2SK4115(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 7A 3-Pin(3+Tab) TO-3PN Cut Tape 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-ch 900V 7A 150W TO-3P(N) |
| 2SK4115(STA1,E,S) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK4116LS | 功能描述:MOSFET N-CH 400V 12A TO-220FI RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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