参数资料
型号: 2SK4120LS
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: JFETs
英文描述: 10 A, 450 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220FI(LS), 3 PIN
文件页数: 4/5页
文件大小: 57K
代理商: 2SK4120LS
2SK4120LS
No. A0823-4/5
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
-
V
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
Ambient Temperature, Ta --
°C
Allowable
Power
Dissipation,
P
D
-
W
Case Temperature, Tc --
°C
Allowable
Power
Dissipation,
P
D
-
W
A S O
PD -- Ta
PD -- Tc
0
20
40
60
80
100
140
120
20
25
30
33
35
15
10
5
40
160
IT12542
0
20
40
60
80
100
120
2.5
140
160
2.0
1.5
1.0
0.5
IT12541
IT12540
0.01
0.1
2
3
5
7
2
1.0
3
5
7
2
0.1
10
s
100
s
100ms
10ms
1ms
DC
operation
1.0
23
5 7
2
10
35 7
2
100
35 7
2 35 7
10
3
5
7
2
3
5
IDc(*1)=10A
IDpack(*2)=7.9A
Operation in
this area is
limited by RDS(on).
IDP=34A
PW
≤10s
025
20
10
15
5
3
10
0
1
4
IT12539
8
9
5
6
7
2
VDS=200V
ID=10A
Tc=25
°C
Single pulse
*1. Shows chip capability
*2. SANYO’s ideal heat dissipation condition
EAS -- Ta
A
valanche
Ener
gy
derating
factor
--
%
Ambient Temperature, Ta --
°C
0
25
50
75
100
125
150
100
80
60
20
40
120
175
IT10478
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