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参数资料
| 型号： | 2SK4136 |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ZP, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 55K |
| 代理商： | 2SK4136 |
2SK4136
No. A0998-2/4
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0V
500
V
Zero-Gate Voltage Drain Current
IDSS
VDS=400V, VGS=0V
100
A
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
3
5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=4A
2.2
4.5
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=4A, VGS=10V
0.65
0.85
Input Capacitance
Ciss
VDS=30V, f=1MHz
600
pF
Output Capacitance
Coss
VDS=30V, f=1MHz
130
pF
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
28
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
18.5
ns
Rise Time
tr
See specified Test Circuit.
46
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
75
ns
Fall Time
tf
See specified Test Circuit.
33
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=8A
24
nC
Gate-to-Source Charge
Qgs
VDS=200V, VGS=10V, ID=8A
4.5
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=200V, VGS=10V, ID=8A
14
nC
Diode Forward Voltage
VSD
IS=8A, VGS=0V
0.9
1.2
V
Package Dimensions
unit : mm (typ)
7002-001
Switching Time Test Circuit
Avalanche Resistance Test Circuit
6.2
7.8
8.2
0.2
0.4
4.2
1.0
5.08
2.54
8.4 10.0
1.2
0.3
0.6
0.7
7.8
5.2
6.2
10.0
6.0
2.5
1
2
3
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
PW=10s
D.C.≤0.5%
P.G
RGS=50
G
S
D
ID=4A
RL=50
VDD=200V
VOUT
2SK4136
VIN
10V
0V
VIN
50
≥50
RG
VDD
L
10V
0V
2SK4136
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4137 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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| 2SK414 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 160V V(BR)DSS | 8A I(D) | TO-247VAR |
| 2SK4143 | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK4143-S17-AY | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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