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参数资料
| 型号： | 2SK4144-S12-AZ |
| 元件分类： | JFETs |
| 英文描述： | 70 A, 60 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, TO-220, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 215K |
| 代理商： | 2SK4144-S12-AZ |
Data Sheet D19413EJ2V0DS
4
2SK4144
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-Drain
Current
-
A
0
100
200
300
400
01
23
45
VGS = 10 V
Pulsed
4.5 V
VDS - Drain to Source Voltage - V
I
D
-Dr
ain
Cur
ren
t-
A
0.001
0.01
0.1
1
10
100
1000
01
2
3
45
6
VDS = 10 V
Pulsed
Tch =
55°C
25°C
25
°C
75
°C
125
°C
150
°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(o
ff)
-
G
at
eto
S
ource
Cut
-off
V
oltage
-
V
0
0.5
1
1.5
2
2.5
3
-75
-25
25
75
125
175
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|y
fs
|-
Forward
T
ransfer
Ad
mittance
-
S
0.1
1
10
100
1000
0.1
1
10
100
VDS = 10 V
Pulsed
Tch =
55°C
25°C
25
°C
75
°C
125
°C
150
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS
(on)
-D
rain
to
S
ou
rc
eOn-s
tate
Resis
tance
-
m
Ω
0
5
10
15
1
10
100
1000
10 V
Pulsed
VGS = 4.5 V
ID - Drain Current - A
R
DS
(on)
-Drai
nto
Sou
rce
O
n-state
Resi
stanc
e-
m
Ω
0
5
10
15
20
0
4
8
12
16
20
Pulsed
ID = 56 A
35 A
14 A
VGS - Gate to Source Voltage - V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4145 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SK4146 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4146-S19-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4147 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Old Company Name in Catalogs and Other Documents |
| 2SK4147-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 0.5A 3-Pin Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SWITCHING N-CHANNEL MOSFET |
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