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参数资料
| 型号： | 2SK4144-S12-AZ |
| 元件分类： | JFETs |
| 英文描述： | 70 A, 60 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, TO-220, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 215K |
| 代理商： | 2SK4144-S12-AZ |
Data Sheet D19413EJ2V0DS
5
2SK4144
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
D
S
(on)
-D
ra
in
to
Sou
rc
eOn-st
ate
Re
sist
ance
-m
Ω
0
5
10
15
-75
-25
25
75
125
175
10 V
VGS = 4.5 V
ID = 35 A
Pulsed
Tch - Channel Temperature -
°C
C
is
s,
C
os
s,
C
rs
s
-Capac
itance
-p
F
10
100
1000
10000
100000
0.1
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(on)
,t
r,t
d(
of
f),
t
f-
S
w
itc
hing
Ti
me
-
ns
1000
100
10
0.1
1
10
100
1
td(off)
td(on)
tf
tr
VDD = 30 V
VGS = 10 V
RG = 0
Ω
ID - Drain Current - A
V
DS
-
Dr
ain
to
S
ou
rce
Vo
ltag
e-
V
0
10
20
30
40
50
60
0
20406080
100
0
2
4
6
8
10
12
VDS
ID = 70 A
VGS
VDD = 48 V
30 V
12 V
QG - Gate Charge - nC
V
GS
-
Gate
to
So
u
rce
Voltag
e-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F-
Dio
de
For
w
ard
Cu
rrent
-
A
0.01
0.1
1
10
100
1000
0
0.5
1
1.5
0 V
Pulsed
VGS = 10 V
4.5 V
VF(S-D) - Source to Drain Voltage - V
trr
-Rev
erse
R
ecove
ry
Time
-
ns
1000
100
10
1
0.1
1
10
100
di/dt = 100 A/
μs
VGS = 0 V
IF - Diode Forward Current - A
<R>
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4145 | 制造商:NEC Electronics Corporation 功能描述: |
| 2SK4146 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4146-S19-AY | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK4147 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Old Company Name in Catalogs and Other Documents |
| 2SK4147-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 0.5A 3-Pin Mini-Mold T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SWITCHING N-CHANNEL MOSFET |
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