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参数资料
| 型号： | 2SK4148-AZ |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | LEAD FREE, SC-43A, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 288K |
| 代理商： | 2SK4148-AZ |
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MOS FIELD EFFECT TRANSISTOR
2SK4148
SWITCHING
N-CHANNEL MOSFET
DATA SHEET
Document No. D18742EJ1V0DS00 (1st edition)
Date Published April 2007 NS CP(K)
Printed in Japan
2007
DESCRIPTION
The 2SK4148 is a switching element that is most suitable for use in
DC-DC converter whose DC input voltage is 24 to 48 V.
Having low on-resistance, and excelling in the switching characteristics,
the 2SK4148 is ideal for use in high-speed switching.
FEATURES
Low input capacitance
Ciss = 120 pF TYP.
Low on-state resistance
RDS(on)1 = 4.5
Ω MAX. (VGS = 10 V, ID = 0.25 A)
RDS(on)2 = 5.2
Ω MAX. (VGS = 4.5 V, ID = 0.25 A)
RDS(on)3 = 6.0
Ω MAX. (VGS = 4 V, ID = 0.25 A)
4.5 V drive available
Through hole mount package (TO-92)
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK4148-AZ
Note
500 p/package
2SK4148-T-AZ
Note
Sn-Ag-Cu
Box type Tape 2500 p/box
TO-92 (SC-43A)
0.26 g TYP.
Note Pb-free (This product does not contain Pb in the external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
250
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TA = 25
°C)
ID(DC)
±0.5
A
Drain Current (pulse)
Note
ID(pulse)
±2.0
A
Total Power Dissipation (TA = 25
°C)
PT
0.75
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10
μs, Duty Cycle ≤ 1%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
1.27
2.54
1.77
MAX.
4.2
MAX.
13
12.7
MIN.
5.5
MAX.
5.2 MAX.
φ
0.5
2
1. Source
2. Drain
3. Gate
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4171 | 100 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK4179GS | 80 A, 75 V, 0.0137 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK4179 | 80 A, 75 V, 0.0137 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK4194LS | 6 A, 450 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK4194LS | 6 A, 450 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK415 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:HIGH SPEED POWER SWITCHING |
| 2SK4150 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK4150TZ-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 0.4A 3-Pin TO-92 T/R 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 250V 0.4A TO-92 |
| 2SK4151 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK4151TZ-E | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 150V 1A TO-92 |
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