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参数资料
| 型号： | 2SK4177 |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 1500 V, 13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SMP, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 58K |
| 代理商： | 2SK4177 |
2SK4177
No. A0869-2/5
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
1500
V
Zero-Gate Voltage Drain Current
IDSS
VDS=1200V, VGS=0V
100
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.5
3.5
V
Forward Transfer Admittance
yfs
VDS=20V, ID=1A
0.7
1.4
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=1A, VGS=10V
10
13
Ω
Input Capacitance
Ciss
VDS=30V, f=1MHz
380
pF
Output Capacitance
Coss
VDS=30V, f=1MHz
70
pF
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
40
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
12
ns
Rise Time
tr
See specified Test Circuit.
37
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
152
ns
Fall Time
tf
See specified Test Circuit.
59
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=2A
37.5
nC
Gate-to-Source Charge
Qgs
VDS=200V, VGS=10V, ID=2A
2.7
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=200V, VGS=10V, ID=2A
20
nC
Diode Forward Voltage
VSD
IS=2A, VGS=0V
0.88
1.2
V
Note) Although the protection diode is contained between gate and source, be careful of handling enough.
Package Dimensions
unit : mm (typ)
7513-002
7001-003
Switching Time Test Circuit
Avalanche Resistance Test Circuit
10.2
8.8
11.0
2.7
11.5
(9.4)
20.9
1.6
0.2
1.3
4.5
0.8
0.4
12
3
2.55
1.2
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
PW=10μs
D.C.≤0.5%
P.G
RGB=50Ω
G
S
D
ID=1A
RL=200Ω
VDD=200V
VOUT
2SK4177
VIN
10V
0V
VIN
50Ω
10V
0V
≥50Ω
VDD
L
RG
DUT
10.2
8.8
1.5MAX
2.7
9.9
3.0
0.2
1.3
4.5
0.8
1.35
0.4
1.4
1.2
2.55
0 to 0.3
12
3
2.55
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4177 | 2 A, 1500 V, 13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SS-MDP1-T1-B4-M2RE | TOGGLE SWITCH, DPDT, LATCHED, 0.02A, 20VDC, THROUGH HOLE-STRAIGHT |
| 2S1-MDP2-T2-B8-M7RE | TOGGLE SWITCH, DPDT, MOMENTARY, 0.02A, 20VDC, THROUGH HOLE-RIGHT ANGLE |
| 2S1-MDP2-T3-B3-M6QE | TOGGLE SWITCH, DPDT, MOMENTARY, 3A, 28VDC, THROUGH HOLE-RIGHT ANGLE |
| 2S1-MSP2-T3-B7-VS21QE | TOGGLE SWITCH, SPDT, MOMENTARY, 3A, 28VDC, THROUGH HOLE-STRAIGHT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4177_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4177-DL-1E | 功能描述:MOSFET NCH 10V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK4177-DL-1EX | 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES |
| 2SK4177-DL-E | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK4177-E | 功能描述:MOSFET N-CH 1500V 2A D2PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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