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参数资料
| 型号： | 2SK4197FG |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | JFETs |
| 英文描述： | POWER, FET, TO-220AB |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 321K |
| 代理商： | 2SK4197FG |
2SK4197FG
No. A1367-2/6
Switching Time Test Circuit
Avalanche Resistance Test Circuit
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0V
600
V
Zero-Gate Voltage Drain Current
IDSS
VDS=480V, VGS=0V
100
μA
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
3
5
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=1.8A
0.8
1.6
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=1.8A, VGS=10V
2.5
3.25
Ω
Input Capacitance
Ciss
VDS=30V, f=1MHz
260
pF
Output Capacitance
Coss
VDS=30V, f=1MHz
50
pF
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
9.7
pF
Turn-ON Delay Time
td(on)
See specied Test Circuit.
12
ns
Rise Time
tr
See specied Test Circuit.
20
ns
Turn-OFF Delay Time
td(off)
See specied Test Circuit.
28
ns
Fall Time
tf
See specied Test Circuit.
12
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=3.5A
11
nC
Gate-to-Source Charge
Qgs
VDS=200V, VGS=10V, ID=3.5A
2.6
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=200V, VGS=10V, ID=3.5A
5.8
nC
Diode Forward Voltage
VSD
IS=3.5A, VGS=0V
0.9
1.2
V
Package Dimensions
unit : mm (typ)
7529-001
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220F-3SG
10.16
0.8
15.87
12.98
3.3
6.68
3.23
1.47 MAX
15.8
4.7
2.54
2.76
12
3
0.5
2.54
3.18
(
1.0)
(0.84)
DETAIL-A
A
EMC
FRAME
PW=10μs
D.C.≤0.5%
P.G
RGS=50Ω
G
S
ID=1.8A
RL=111Ω
VDD=200V
VGS=10V
VOUT
2SK4197FG
D
50Ω
≥50Ω
RG
VDD
L
10V
0V
2SK4197FG
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4197FS | 功能描述:MOSFET NCH 10V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK4197FS_10 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4197LS | 功能描述:MOSFET NCH 10V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK4198FG | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4198FG_10 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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