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参数资料
| 型号： | 2SK4197FG |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | JFETs |
| 英文描述： | POWER, FET, TO-220AB |
| 封装： | TO-220F, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 321K |
| 代理商： | 2SK4197FG |
2SK4197FG
No. A1367-5/6
IT13719
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
-
V
VGS -- Qg
0
25
50
75
100
125
150
100
80
60
20
40
120
175
EAS -- Ta
A
valanche
Ener
gy
derating
factor
--
%
IT10478
Ambient Temperature, Ta --
°C
Drain-to-Source Voltage, VDS -- V
A S O
Drain
Current,
I
D
-
A
Allowable
Power
Dissipation,
P
D
-
W
PD -- Tc
Case Temperature, Tc --
°C
0
20
40
60
80
100
120
2.5
140
160
PD -- Ta
Allowable
Power
Dissipation,
P
D
-
W
2.0
1.5
1.0
0.5
Ambient Temperature, Ta --
°C
IT13717
IT13720
0
1
2
3
4
5
6
7
8
12
10
9
610
4
28
VDS=200V
ID=3.5A
0
20
40
60
80
100
140
120
5
10
25
28
20
30
15
160
IT14236
0.01
0.1
2
3
5
7
2
1.0
3
5
7
2
0.1
1.0
10
100
23 5 7
7
2
1000
35
2 3 5 7
10
3
5
7
3
2 I
DP=13A
Operation in
this area is
limited by RDS(on).
DC
operation
100ms
10ms
1ms
100
μs
10
μs
IDC=3.5A
IDpack=3.3A
Tc=25
°C
Single pulse
PW
≤10μs
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4197FS | 功能描述:MOSFET NCH 10V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK4197FS_10 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4197LS | 功能描述:MOSFET NCH 10V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK4198FG | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK4198FG_10 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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