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参数资料
| 型号： | 2SK4201-S19-AY |
| 元件分类： | JFETs |
| 英文描述： | 80 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, TO-220, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 184K |
| 代理商： | 2SK4201-S19-AY |
Data Sheet D19504EJ1V0DS
4
2SK4201
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Drain
Cu
rrent
-
A
0
50
100
150
200
250
05
10
VGS = 10 V
Pulsed
VDS - Drain to Source Voltage - V
I
D
-Drain
Current
-
A
0.1
1
10
100
1000
0
123
45
6
VDS = 10 V
Pulsed
Tch =
55°C
25°C
25
°C
75
°C
125
°C
150
°C
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(of
f)
-G
ate
to
S
ource
Cut
-off
V
ol
tage
-
V
0
0.5
1
1.5
2
2.5
3
3.5
4
-75
-25
25
75
125
175
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|y
fs
|-
Fo
rw
ar
dT
ransfer
A
d
mittance
-
S
1
10
100
0.1
1
10
100
VDS = 10 V
Pulsed
Tch =
55°C
25°C
25
°C
75
°C
125
°C
150
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
D
S
(on)
-D
rain
to
S
ou
rc
eOn-s
tate
R
esis
tance
-m
Ω
0
4
8
12
16
20
24
1
10
100
1000
VGS = 10 V
Pulsed
ID - Drain Current - A
R
D
S
(on)
-D
rain
to
S
ou
rc
eOn-s
tate
R
esis
tance
-m
Ω
0
4
8
12
16
20
24
0
5
10
15
20
ID = 40 A
Pulsed
VGS - Gate to Source Voltage - V
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| 2SK4209 | 功能描述:MOSFET N-CH 800V 12A TO-3PB RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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