- 您现在的位置：买卖IC网 > PDF目录33505 > 2SK4201-S19-AY 80 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF资料下载
参数资料
| 型号： | 2SK4201-S19-AY |
| 元件分类： | JFETs |
| 英文描述： | 80 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | LEAD FREE, TO-220, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 184K |
| 代理商： | 2SK4201-S19-AY |
Data Sheet D19504EJ1V0DS
5
2SK4201
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS
(on)
-Drain
to
Sou
rce
O
n-state
R
esi
stance
-m
Ω
0
4
8
12
16
20
24
-75
-25
25
75
125
175
Pulsed
VGS = 10 V
ID = 40 A
Tch - Channel Temperature -
°C
C
is
s,
C
os
s,
C
rs
s
-C
apa
ci
ta
nc
e-
pF
10
100
1000
10000
100000
0.1
1
10
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(on)
,t
r,t
d(
of
f),
t
f-
Switc
hing
Ti
me
-ns
1
10
100
1000
0.1
1
10
100
tr
td(off)
tf
VDD = 50 V
VGS = 10 V
RG = 0
Ω
td(on)
ID - Drain Current - A
V
DS
-
Dr
ai
nto
S
ou
rce
V
ol
tage
-
V
0
20
40
60
80
100
0
20
406080
100
0
2
4
6
8
10
VDS
ID = 80 A
VGS
VDD = 80 V
50 V
20 V
QG - Gate Charge - nC
V
GS
-
Gate
to
S
ou
rce
Voltag
e-
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
IF
-Dio
de
For
w
ard
Cu
rrent
-A
0.1
1
10
100
1000
0
0.5
1
1.5
VGS = 10 V
0 V
Pulsed
VF(S-D) - Source to Drain Voltage - V
trr
-Rev
erse
R
ecovery
Time
-n
s
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
μs
VGS = 0 V
IF - Diode Forward Current - A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK4206GT | SMALL SIGNAL, FET |
| 2SK4206U | 0.47 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK4209 | 12 A, 800 V, 1.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK4209 | 12 A, 800 V, 1.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK4227JS | POWER, FET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK4203LS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4204LS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 2SK4207 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Swiching Regulator Applications |
| 2SK4207(Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-ch 900V 13A150W TO-3P(N) 制造商:Toshiba 功能描述:TRANSISTOR |
| 2SK4209 | 功能描述:MOSFET N-CH 800V 12A TO-3PB RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
发布紧急采购，3分钟左右您将得到回复。