- 您现在的位置：买卖IC网 > PDF目录41543 > 2SK711-V 32 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 PDF资料下载
参数资料
| 型号： | 2SK711-V |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 32 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
| 封装： | 2-3F1B, SC-59, TO-236MOD, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 523K |
| 代理商： | 2SK711-V |
2SK711
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK711
High Frequency Amplifier Applications
AM High Frequency Amplifier Applications
Audio Frequency Amplifier Applications
High |Yfs|: |Yfs| = 25 mS (typ.)
Low Ciss: Ciss = 7.5 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
20
V
Gate current
IG
10
mA
Drain power dissipation
PD
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = 15 V, VDS = 0 V
1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0 V, IG = 100 μA
20
V
Drain current
IDSS
(Note)
VDS = 5 V, VGS = 0 V
6
32
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 5 V, ID = 1 μA
2.5
V
Forward transfer admittance
Yfs
VDS = 5 V, VGS = 0 V, f = 1 kHz
15
25
mS
Input capacitance
Ciss
VDS = 5 V, VGS = 0 V, f = 1 MHz
7.5
10
pF
Reverse transfer capacitance
Crss
VDS = 5 V, ID = 0 mA, f = 1 MHz
2
3
pF
Note: IDSS classification
GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA
(G)
(L)
(V)
( ) ...... IDSS rank marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK711-BL | 20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
| 2SK823 | 25 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK872 | 6 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK880-GR | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK880 | N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK715 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:AM Tuner RF Amp Applications |
| 2SK715_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:AM Tuner, RF Amplifier Applications |
| 2SK715T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 15V V(BR)DSS | 5MA I(DSS) | SPAK |
| 2SK715U | 功能描述:MOSFET J-FET N-CH 50V 15MA SPA RoHS:是 类别:分离式半导体产品 >> JFET（结点场效应 系列:- 标准包装:8,000 系列:- 电流 - 漏极(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏极至源极电压(Vdss):30V 漏极电流 (Id) - 最大:10mA FET 型:N 沟道 电压 - 击穿 (V(BR)GSS):- 电压 - 切断 (VGS 关）@ Id:180mV @ 1µA 输入电容 (Ciss) @ Vds:4pF @ 10V 电阻 - RDS（开）:200 欧姆 安装类型:表面贴装 包装:带卷 (TR) 封装/外壳:3-XFDFN 供应商设备封装:3-ECSP1006 功率 - 最大:100mW |
| 2SK715U-AC | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。