参数资料
型号: 2STC5948
厂商: STMICROELECTRONICS
元件分类: 功率晶体管
英文描述: 17 A, 250 V, NPN, Si, POWER TRANSISTOR
封装: ROHS COMPLIANT, TO-3P, 3 PIN
文件页数: 1/8页
文件大小: 0K
代理商: 2STC5948
November 2008
Rev 4
1/8
8
2STC5948
High power NPN epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = 250 V
Complementary to 2STA2120
Typical ft = 25 MHz
Fully characterized at 125
oC
Application
Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Table 1.
Device summary
Figure 1.
Internal schematic diagram
TO-3P
1
2
3
Order code
Marking
Package
Packaging
2STC5948
TO-3P
Tube
相关PDF资料
PDF描述
2STF1360 3 A, 60 V, NPN, Si, POWER TRANSISTOR
2STN1360 3 A, 60 V, NPN, Si, POWER TRANSISTOR
2STD1360T4 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252
2STF1550 5 A, 50 V, NPN, Si, POWER TRANSISTOR
2STN5551 0.6 A, 160 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
2STC5948_0807 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:High power NPN epitaxial planar bipolar transistor
2STC5949 功能描述:两极晶体管 - BJT High PWR NPN planar bipolar trans RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2STD1360 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low voltage fast-switching NPN power transistors
2STD1360T4 功能描述:两极晶体管 - BJT Low Voltage NPN Pwr Trans RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2STD1665 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Low voltage fast-switching NPN power transistor