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参数资料
| 型号： | 2STW1695 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-247 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 9/9页 |
| 文件大小： | 169K |
| 代理商： | 2STW1695 |
2STW1695
9/9
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相关PDF资料 |
PDF描述 |
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| 2STW200 | 25 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-247 |
| 2STW100 | 25 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 2STW4468 | 10 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-247AA |
| 40-01-B4C-AJMB | Dome POWER LED |
| 40-05-015 | Package Outline: 48 lead 300 mil SSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2STW1695_08 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:High power PNP epitaxial planar bipolar transistor |
| 2STW200 | 功能描述:达林顿晶体管 Comp Darlington PWR 80V 25A 130W Trans RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2STW4466 | 功能描述:两极晶体管 - BJT High Pwr PNP BiPolar Trans RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2STW4466_08 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:High power NPN epitaxial planar bipolar transistor |
| 2STW4468 | 功能描述:两极晶体管 - BJT High PWR NPN Trans 140V VCEO 20 MHz RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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