参数资料
型号: 2V7002WT1G
厂商: ON Semiconductor
文件页数: 1/5页
文件大小: 0K
描述: MOSFET N-CH 60V 310MA SC70-3
标准包装: 3,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 310mA
开态Rds(最大)@ Id, Vgs @ 25° C: 1.6 欧姆 @ 500mA,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 700nC @ 10V
输入电容 (Ciss) @ Vds: 24.5pF @ 20V
功率 - 最大: 280mW
安装类型: 表面贴装
封装/外壳: SC-70,SOT-323
供应商设备封装: SC-70-3(SOT323)
包装: 带卷 (TR)
2N7002W, 2V7002W
Small Signal MOSFET
60 V, 340 mA, Single, N ? Channel, SC ? 70
Features
? ESD Protected
? Low R DS(on)
? Small Footprint Surface Mount Package
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
? 2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC ? Q101 Qualified and
PPAP Capable
V (BR)DSS
60 V
http://onsemi.com
R DS(on) MAX
1.6 W @ 10 V
2.5 W @ 4.5 V
I D MAX
(Note 1)
340 mA
Applications
? Low Side Load Switch
? Level Shift Circuits
? DC ? DC Converter
? Portable Applications i.e. DSC, PDA, Cell Phone, etc.
SIMPLIFIED SCHEMATIC
Gate 1
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
3
Drain
Rating
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
60
± 20
Unit
V
V
Source
2
(Top View)
Drain Current (Note 1)
Steady State
t<5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 85 ° C
I D
310
220
340
240
mA
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
Power Dissipation (Note 1)
Steady State
t<5s
Pulsed Drain Current (t p = 10 m s)
Operating Junction and Storage
Temperature Range
P D
I DM
T J , T STG
280
330
1.4
? 55 to
+150
mW
A
° C
SC ? 70/SOT ? 323
CASE 419
STYLE 8
1
Gate
71 M G
G
2
Source
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
250
260
mA
° C
71 = Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
Gate ? Source ESD Rating ESD 900 V
(HBM, Method 3015)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Junction ? to ? Ambient ? Steady State R q JA 450 ° C/W
(Note 1)
Junction ? to ? Ambient ? t ≤ 5 s (Note 1) R q JA 375
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
ORDERING INFORMATION
Device Package Shipping ?
2N7002WT1G SC ? 70 3000/Tape & Reel
(Pb ? Free)
2V7002WT1G SC ? 70 3000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
September, 2012 ? Rev. 5
1
Publication Order Number:
2N7002W/D
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