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参数资料
| 型号： | 30A02MH |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封装： | MCPH3, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 28K |
| 代理商： | 30A02MH |
30A02MH
No.7359-1/4
PNP Epitaxial Planar Silicon Transistor
Applications
Low-frequency Amplifier, high-speed switching,
small motor drive.
Features
Large current capacitance.
Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=580m[IC=0.7A, IB=35mA].
Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--30
V
Collector-to-Emitter Voltage
VCEO
--30
V
Emitter-to-Base Voltage
VEBO
--5
V
Collector Current
IC
--700
mA
Collector Current (Pulse)
ICP
--1.4
A
Collector Dissipation
PC
Mounted on a ceramic board (600mm2!0.8mm)
600
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=--30V, IE=0
--100
nA
Emitter Cutoff Current
IEBO
VEB=--4V, IC=0
--100
nA
DC Current Gain
hFE
VCE=--2V, IC=--10mA
200
500
Gain-Bandwidth Product
fT
VCE=--10V, IC=--50mA
520
MHz
Output Capacitance
Cob
VCB=--10V, f=1MHz
4.7
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=--200mA, IB=--10mA
--110
--220
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=--200mA, IB=--10mA
--0.9
--1.2
V
Marking : AL
Continued on next page.
Ordering number : ENN7359
30A02MH
O3003 TS IM TA-100125
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Low-Frequency
General-Purpose Amplifier Applications
Package Dimensions
unit : mm
2194A
[30A02MH]
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
2
3
12
3
(Bottom view)
(Top view)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 30A02MH-TL-E | 功能描述:两极晶体管 - BJT BIP PNP 0.7A 30V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 30A02MH-TL-H | 功能描述:两极晶体管 - BJT BIP PNP 0.7A 30V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 30A02SP-AC | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 30V 0.7A SPA |
| 30A02SS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Low-Frequency General-Purpose Amplifier Applications |
| 30A030D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Industrial Control IC |
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