- 您现在的位置：买卖IC网 > PDF目录358641 > 3N100E (Motorola, Inc.) TMOS POWER FET 3.0 AMPERES 1000 VOLTS PDF资料下载
参数资料
| 型号： | 3N100E |
| 厂商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
| 中文描述： | TMOS是功率场效应晶体管3.0安培1000伏特 |
| 文件页数： | 2/10页 |
| 文件大小： | 262K |
| 代理商： | 3N100E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
1000
—
—
1.23
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 1000 Vdc, VGS = 0 Vdc)
(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
6.0
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 1.5 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 3.0 Adc)
(ID = 1.5 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
2.96
4.0
Ohm
—
—
4.97
—
14.4
12.6
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 1.5 Adc)
gFS
2.0
3.56
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
1316
1800
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
117
260
Reverse Transfer Capacitance
—
26
75
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
)
RG = 9.1
td(on)
tr
td(off)
tf
—
13
25
ns
Rise Time
(VDD = 400 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
—
19
40
Turn–Off Delay Time
—
42
90
Fall Time
—
33
55
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
32.5
45
nC
(VDS = 400 Vdc, ID = 3.0 Adc,
—
6.0
—
—
14.6
—
—
13.5
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.794
0.63
1.1
—
Vdc
Reverse Recovery Time
(See Figure 14)
dIS/dt = 100 A/
μ
s)
trr
—
615
—
ns
(IS = 3.0 Adc, VGS = 0 Vdc,
ta
tb
—
104
—
—
511
—
Reverse Recovery Stored Charge
QRR
—
2.92
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
相关PDF资料 |
PDF描述 |
|---|---|
| 3N128 | Silicon MOS Transistor |
| 3N142 | SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
| 3N153 | SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
| 3N154 | SILICON MOS TRANSISTOR |
| 3N161 | DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 3N101 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS |
| 3N102 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS |
| 3N103 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS |
| 3N104 | 制造商:NJSEMI 制造商全称:New Jersey Semi-Conductor Products, Inc. 功能描述:NPN/PNP DUAL EMITTER CHOPPER BI-POLAR TRANSISTORS |
| 3N104-A000-S08 BF | 制造商:3M Electronic Products Division 功能描述:CONN PLUG 4POS A CODE PIN 制造商:3M Electronic Products Division 功能描述:PLUG M12 A CODE SOLDER 4WAY 制造商:3M Electronic Products Division 功能描述:PLUG, M12, A CODE, SOLDER, 4WAY 制造商:3M Electronic Products Division 功能描述:PLUG, M12, A CODE, SOLDER, 4WAY, Connector Type:Circular Industrial, Series:3N10 |
发布紧急采购，3分钟左右您将得到回复。