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参数资料
| 型号： | 3N100E |
| 厂商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
| 中文描述： | TMOS是功率场效应晶体管3.0安培1000伏特 |
| 文件页数： | 3/10页 |
| 文件大小： | 262K |
| 代理商： | 3N100E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
0
4
8
12
16
20
2
6
10
14
18
3
5 V
6 V
VDS
≥
10 V
2.0
2.8
3.6
4.4
5.2
2.4
3.2
4.0
4.8
TJ = –55
°
C
25
°
C
100
°
C
TJ = 25
°
C
VGS = 10 V
15 V
2.8
3.4
VGS = 0 V
0
200
400
1
100
100000
100
300
600
500
25
°
C
100
°
C
TJ = 125
°
C
1.0
3.0
5.5
1
3
5
6
4
2
4.5
25
°
C
–55
°
C
VGS = 10 V
–50
0.4
0.8
1.2
2.0
2.4
–25
0
25
50
75
100
125
150
VGS = 10 V
ID = 1.5 A
4 V
5
1
1000
3.2
3.6
3.8
3.0
1.6
6
2
4
ID
5.6
2.0
4.0
6.0
5.0
10
1000
800
0
1.0
3.0
5.0
2.0
4.0
6.0
5.5
3
5
1
6
2
4
0
6.0
2.5
1.5
3.5
1.5
2.5
3.5
4.5
700
900
10000
VGS = 10 V
TJ = 100
°
C
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