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参数资料
| 型号： | 3N250-E4/72 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封装： | ROHS COMPLIANT, PLASTIC, CASE KBPM, 4 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 84K |
| 代理商： | 3N250-E4/72 |
www.vishay.com
2
Document Number 88531
10-Nov-06
Vishay General Semiconductor
KBP005M thru KBP10M, 3N246 thru 3N252
* JEDEC registered values
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x 12 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
KBP
005M
KBP
01M
KBP
02M
KBP
04M
KBP
06M
KBP
08M
KBP
10M
UNIT
3N246
3N247
3N248
3N249
3N250
3N251
3N252
* Maximum instantaneous
forward voltage drop per diode
at 1.0 A
at 1.57 A
VF
1.0
1.3
V
* Maximum DC reverse
current at rated DC blocking
voltage per diode
TA = 25 °C
TA = 125 °C
IR
5.0
500
A
Typical junction
capacitance per diode
at 4.0 V, 1 MHz
CJ
15
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
KBP
005M
KBP
01M
KBP
02M
KBP
04M
KBP
06M
KBP
08M
KBP
10M
UNIT
3N246
3N247
3N248
3N249
3N250
3N251
3N252
Typical thermal resistance (1)
RθJA
RθJL
40
13
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
KBP06M-E4/45
1.895
45
30
Tube
KBP06M-E4/51
1.895
51
600
Anti-static PVC Tray
3N250-E4/45
1.895
45
30
Tube
3N250-E4/51
1.895
51
600
Anti-static PVC Tray
Figure 1. Derating Curve Output Rectified Current
0
20
40
60
80
100
120
140 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Capacitive Load
Ipk/IAV = 5.0
Ipk/IAV =10
Ipk/IAV =20
(per leg)
Br
idge
O
u
tp
u
tF
u
ll
W
a
v
e
Rectified
C
u
rrent
A
v
er
age
(A)
Ambient Temperature (°C)
P.C.B. Mounted on
0.47 x 0.47" (12 x 12 mm)
Copper Pads
60 Hz Resistive or
Inductive Load
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
10
1
100
10
20
30
40
50
60
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
1.0 Cycle
Single Half Sine-Wave
Tj = 150 °C
TA = 25 °C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 3N250-M4/45 | 制造商:Vishay Semiconductors 功能描述:1.5A,600V,GLASS,IN-LINE BRIDGE |
| 3N250-M4/51 | 制造商:Vishay Semiconductors 功能描述:1.5A,600V,GLASS,IN-LINE BRIDGE |
| 3N251 | 功能描述:桥式整流器 800V 1.5A BRIDGE RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| 3N251_Q | 功能描述:桥式整流器 800V 1.5A BRIDGE RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| 3N251-E4/45 | 功能描述:桥式整流器 1.5 Amp 800 Volt RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
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