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参数资料
| 型号： | 41LV16100B-50T |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 100万× 16（16兆）动态与江户页面模式内存 |
| 文件页数： | 21/22页 |
| 文件大小： | 152K |
| 代理商： | 41LV16100B-50T |
IS41LV16100B
8
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
04/13/05
ISSI
AC CHARACTERISTICS (Continued)(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
tWP
Write Command Pulse Width(17)
8—
10
—
ns
tWPZ
WE Pulse Widths to Disable Outputs
10
—
10
—
ns
tRWL
Write Command to
RAS Lead Time(17)
13
—
15
—
ns
tCWL
Write Command to
CAS Lead Time(17, 21)
8—
15
—
ns
tWCS
Write Command Setup Time(14, 17, 20)
0—
ns
tDHR
Data-in Hold Time (referenced to
RAS)39
—
40
—
ns
tOEH
OE Hold Time from WE during
14
—
15
—
ns
READ-MODIFY-WRITE cycle(18)
tDS
Data-In Setup Time(15, 22)
0—
ns
tDH
Data-In Hold Time(15,22)
8—
15
—
ns
tRWC
READ-MODIFY-WRITE Cycle Time
110
—
155
—
ns
tRWD
RAS to WE Delay Time during
65
—
85
—
ns
READ-MODIFY-WRITE Cycle(14)
tCWD
CAS to WE Delay Time(14, 20)
26
—
40
—
ns
tAWD
Column-Address to
WE Delay Time(14)
40
—
55
—
ns
tPC
EDO Page Mode READ or WRITE
30
—
40
—
ns
Cycle Time(24)
tRASP
RAS Pulse Width in EDO Page Mode
50
100K
60
100K
ns
tCPA
Access Time from
CAS Precharge(15)
—30
—
35
ns
tPRWC
EDO Page Mode READ-WRITE
56
—
56
—
ns
Cycle Time(24)
tCOH
Data Output Hold after
CAS LOW
5—
ns
tOFF
Output Buffer Turn-Off Delay from
3
12
3
15
ns
CAS or RAS(13,15,19,29)
tWHZ
Output Disable Delay from
WE
310
3
15
ns
tCLCH
Last
CAS going LOW to First CAS
10
—
10
—
ns
returning HIGH(23)
tCSR
CAS Setup Time (CBR REFRESH)(30, 20)
5—
ns
tCHR
CAS Hold Time (CBR REFRESH)(30,21)
8—
10
—
ns
tORD
OE Setup Time prior to RAS during
0
—
0
—
ns
HIDDEN REFRESH Cycle
tREF
Auto Refresh Period (1,024 Cycles)
—
16
—
16
ms
tT
Transition Time (Rise or Fall)(2, 3)
350
3
50
ns
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PDF描述 |
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| 41LV16100B-60KI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60KLI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60KL | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 41LV16100B-50TI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-50TL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-50TLI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60K | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60KI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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