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参数资料
| 型号： | 41LV16100B-60KL |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 100万× 16（16兆）动态与江户页面模式内存 |
| 文件页数： | 1/22页 |
| 文件大小： | 152K |
| 代理商： | 41LV16100B-60KL |
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. B
04/14/05
IS41LV16100B
ISSI
Copyright 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice.
ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
TTL compatible inputs and outputs; tristate I/O
Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
—
RAS-Only, CAS-before-RAS (CBR), and Hidden
JEDEC standard pinout
Single power supply: 3.3V ± 10%
Byte Write and Byte Read operation via two
CAS
Industrial Temperature Range: -40oC to +85oC
Lead-free available
DESCRIPTION
The
ISSI IS41LV16100B is 1,048,576 x 16-bit high-perfor-
mance CMOS Dynamic Random Access Memories. These
devices offer an accelerated cycle access called EDO
Page Mode. EDO Page Mode allows 1,024 random ac-
cesses within a single row with access cycle time as short
as 20 ns per 16-bit word.
These features make the IS41LV16100B ideally suited for
high-bandwidth graphics, digital signal processing, high-
performance computing systems, and peripheral
applications.
The IS41LV16100B is packaged in a 42-pin 400-mil SOJ
and 400-mil 50- (44-) pin TSOP (Type II).
1M x 16 (16-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
KEY TIMING PARAMETERS
Parameter
-50
-60
Unit
Max.
RAS Access Time (tRAC)
5060ns
Max.
CAS Access Time (tCAC)
1415ns
Max. Column Address Access Time (tAA)
2530ns
Min. EDO Page Mode Cycle Time (tPC)
3040ns
Min. Read/Write Cycle Time (tRC)
85
110
ns
PIN CONFIGURATIONS
50(44)-Pin TSOP (Type II)
42-Pin SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
VDD
I/O0
I/O1
I/O2
I/O3
VDD
I/O4
I/O5
I/O6
I/O7
NC
WE
RAS
NC
A0
A1
A2
A3
VDD
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
GND
PIN DESCRIPTIONS
A0-A9
Address Inputs
I/O0-15
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
UCAS
Upper Column Address Strobe
LCAS
Lower Column Address Strobe
VDD
Power
GND
Ground
NC
No Connection
APRIL 2005
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
VDD
I/O0
I/O1
I/O2
I/O3
VDD
I/O4
I/O5
I/O6
I/O7
NC
WE
RAS
NC
A0
A1
A2
A3
VDD
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A9
A8
A7
A6
A5
A4
GND
相关PDF资料 |
PDF描述 |
|---|---|
| 41LV16100B-60K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TLI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TL | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 41LV16100B-60KLI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TLI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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