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参数资料
| 型号： | 41LV16100B-60KL |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 100万× 16（16兆）动态与江户页面模式内存 |
| 文件页数： | 7/22页 |
| 文件大小： | 152K |
| 代理商： | 41LV16100B-60KL |
IS41LV16100B
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
15
Rev. B
04/13/05
ISSI
EDO-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY WRITE Cycles)
Note:
1. tPC can be measured from falling edge of
CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both
measurements must meet the tPC specifications.
Don’t Care
Undefined
tRASP
tRP
ADDRESS
UCAS/LCAS
RAS
Row
tCRP
tRCD
tCSH
tCP
tCAH
tCAS, tCLCH
tRAL
tRSH
tCP
tRAH
tRAD
tAR
tASR
Column
tCAH
Column
tASC
tCAS, tCLCH
OE
I/O
WE
tASC
tRWD
tRCS
tCWL
tWP
tAWD
tCWD
tDH
tDS
tCAC
tCLZ
tAWD
tCWD
tCWL
tWP
tAWD
tCWD
tCWL
tRWL
tWP
Open
DIN
DOUT
tOE
tOD
tOEH
tOD
tDH
tDS
tCPA
tAA
tCAC
tCLZ
DIN
DOUT
tDH
tDS
tCAC
tCLZ
DIN
DOUT
tCPA
tAA
tRAC
tAA
tPC / tPRWC(1)
相关PDF资料 |
PDF描述 |
|---|---|
| 41LV16100B-60K | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TLI | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TL | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 41LV16100B-60KLI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60T | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TL | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 41LV16100B-60TLI | 制造商:ISSI 制造商全称:Integrated Silicon Solution, Inc 功能描述:1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
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