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参数资料
| 型号： | 42S16800A |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16Meg × 8，8Meg x16 |
| 文件页数： | 13/22页 |
| 文件大小： | 540K |
| 代理商： | 42S16800A |
ISSI
20
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00C
01/20/05
IS42S81600A, IS42S16800A, IS42S32400A
FUNCTIONAL DESCRIPTION
The 128Mb SDRAMs are quad-bank DRAMs which oper-
ate at 2.5V or 3.3V and include a synchronous interface (all
signals are registered on the positive edge of the clock
signal, CLK). Each of the 33,554,432-bit banks is organized
as 4,096 rows by 512 columns by 16 bits.
Read and write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for a
programmed number of locations in a programmed
sequence. Accesses begin with the registration of an AC-
TIVE command which is then followed by a READ or WRITE
command. The address bits registered coincident with the
ACTIVE command are used to select the bank and row to
be accessed (BA0andBA1selectthebank,A0-A11selecttherow).
The address bits A0-A9 (x8); A0-A8 (x16); A0-A7 (X32) regis-
tered coincident with the READ or WRITE command are
used to select the starting column location for the burst
access.
Prior to normal operation, the SDRAM must be initialized.
The following sections provide detailed information covering
device initialization, register definition, command
descriptions and device operation.
Initialization
SDRAMs must be powered up and initialized in a
predefined manner.
The 128M SDRAM is initialized after the power is applied to
VDD and VDDQ (simultaneously) and the clock is stable.
A 200s delay is required prior to issuing any command
other than a COMMAND INHIBIT or a NOP. The COMMAND
INHIBIT or NOP may be applied during the 100us period and
should continue at least through the end of the period.
With at least one COMMAND INHIBIT or NOP command
having been applied, a PRECHARGE command should be
applied once the 100s delay has been satisfied. All banks
must be precharged. This will leave all banks in an idle state
where two AUTO REFRESH cycles must be performed. After
the AUTOREFRESH cycles are complete, the SDRAM is then
ready for mode register programming.
The mode register and extended mode registers should be
loaded prior to applying any operational command because
it will power up in an unknown state.
相关PDF资料 |
PDF描述 |
|---|---|
| 42S32200 | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 4300-000 | EMI/RFI FILTER Hermetically Sealed |
| 4300-000LF | |
| 4300-001 | EMI/RFI FILTER Hermetically Sealed |
| 4300-001LF | |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 42S16800L | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A60 | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A70 | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A80 | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S17800L | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
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