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参数资料
| 型号： | 42S16800A |
| 厂商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16Meg × 8，8Meg x16 |
| 文件页数： | 8/22页 |
| 文件大小： | 540K |
| 代理商： | 42S16800A |
ISSI
16
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARY INFORMATION
Rev. 00C
01/20/05
IS42S81600A, IS42S16800A, IS42S32400A
DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
Speed Min.
Max.
Unit
IIL
InputLeakageCurrent
0V
≤ VIN ≤ VCC, with pins other than
–5
5
A
the tested pin at 0V
IOL
OutputLeakageCurrent
Output is disabled, 0V
≤ VOUT ≤ VCC
–5
5
A
VOH
Output High Voltage Level
IOUT = –2 mA
2.4
—
V
VOL
OutputLowVoltageLevel
IOUT = +2 mA
—
0.4
V
IDD1
Operating Current(1,2)
OneBankOperation,
Com.
-6
—
170
mA
Com.
-7
—
160
mA
BurstLength=1
Ind.
-7
—
170
mA
tRC
≥ tRC (min.)
Com.
-10
—
140
mA
IOUT = 0mA
Ind.
-10
—
150
mA
IDD2P
PrechargeStandbyCurrent
CKE
≤ VIL (MAX)tCK = tCK (MIN)—
—
3
mA
IDD2PS
(InPower-DownMode)
tCK =
∞
——
2
mA
IDD2N
PrechargeStandbyCurrent
CKE
≥ VIH (MIN)tCK = tCK (MIN)—
—
25
mA
IDD2NS
(InNonPower-DownMode)
tCK =
∞
——
15
mA
IDD3P
Active Standby Current
CKE
≤ VIL (MAX)tCK = tCK (MIN)—
—
10
mA
IDD3PS
(InPower-DownMode)
tCK =
∞
——
10
mA
IDD3N
Active Standby Current
CKE
≥ VIH (MIN)tCK = tCK (MIN) Com.
—
35
mA
Ind.
—
45
mA
IDD3NS
(InNonPower-DownMode)
tCK =
∞
Com.
—
30
mA
Ind.
—
35
mA
Com.
-6
—
165
mA
IDD4
OperatingCurrent
tCK = tCK (MIN)
Com.
-7
—
150
mA
(In Burst Mode)(1)
IOUT = 0mA
Ind.
-7
—
160
mA
Com.
-10
—
140
mA
Ind.
-10
—
150
mA
Com.
-6
—
330
mA
IDD5
Auto-RefreshCurrent
tRC = tRC (MIN)
Com.
-7
—
300
mA
Ind.
-7
—
330
mA
Com.
-10
—
270
mA
Ind.
-10
—
300
mA
IDD6
Self-RefreshCurrent
CKE
≤0.2V
Com.
—
2
mA
Ind.
—
3
mA
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 F should be inserted between VDD and Vss for each memory
chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. IDD1 and IDD4 depend on the output load. The maximum values for Icc1 and Icc4 are obtained with the output open state.
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PDF描述 |
|---|---|
| 42S32200 | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 4300-000 | EMI/RFI FILTER Hermetically Sealed |
| 4300-000LF | |
| 4300-001 | EMI/RFI FILTER Hermetically Sealed |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 42S16800L | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A60 | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A70 | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S16800L-A80 | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
| 42S17800L | 制造商:NEC 制造商全称:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE |
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