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参数资料
| 型号： | 4AC12 |
| 厂商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件页数： | 3/7页 |
| 文件大小： | 48K |
| 代理商： | 4AC12 |
4AC12
3
Maximum Collector Dissipation Curve
6
4
2
0
50
100
150
Ambient temperature Ta (
°C)
Collector
power
dissipation
P
C
(W)
4 device operation
3 device operation
2 device operation
1 device operation
Note: Collector power dissipation of each devices
is identical.
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
P
C
(W)
4 device operation
3 device operation
2 device operation
1 device operation
10
3.0
1.0
0.3
Collector
current
I
C
(A)
0.1
0.03
0.01
1.0
50
10
0.5
2
20
5
Collector to emitter voltage VCE (V)
Ta = 25
°C
1 shot pulse
iC(peak)
IC(max)
DC
Operation
(T
C
=
25
°C)
PW
=
10
ms
1 ms
Area of Safe Operation
TC = 25°C
IB = 0
30 A
40
50
60
90
70
2.0
1.6
1.2
0.8
0.4
01
4
3
25
Collector
current
I
C
(A)
Collector to emitter voltage VCE (V)
Typical Output Characteristics
80
相关PDF资料 |
PDF描述 |
|---|---|
| 4AC21 | Power Transistor Arrays |
| 4AC22 | Power Transistor Arrays |
| 4AC23 | Power Transistor Arrays |
| 4AC24 | Power Transistor Arrays |
| 4AC25 | Power Transistor Arrays |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 4AC13 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | ARRAY | COMM EMITTER | 50V V(BR)CEO | 5A I(C) | SIP |
| 4AC138DMQB/QS | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 4AC14 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Triple Diffused |
| 4AC15 | 制造商:ROHM 制造商全称:Rohm 功能描述:Power Transistor Arrays |
| 4AC16 | 制造商:ROHM 制造商全称:Rohm 功能描述:Power Transistor Arrays |
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