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参数资料
| 型号： | 4AM15 |
| 厂商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel/P-Channel Power MOS FET Array(N沟道/P沟道功率MOSFET阵列) |
| 中文描述： | 硅N-Channel/P-Channel功率MOS FET阵列（不适用沟道/页沟道功率MOSFET的阵列） |
| 文件页数： | 3/6页 |
| 文件大小： | 39K |
| 代理商： | 4AM15 |
4AM15
3
Electrical Characteristics (Ta = 25°C)
N Channel
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
200
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = 160 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
4.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.33
0.5
I
D = 2 A, VGS = 10 V*
1
Forward transfer admittance
|y
fs|
1.5
2.5
—
S
I
D = 2 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
750
—
pF
V
DS = 10 V
Output capacitance
Coss
—
260
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
40
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—19
—
ns
I
D = 2 A
Rise time
t
r
—26
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—45
—
ns
R
L = 15
Fall time
t
f
—24
—
ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 4 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
125
—
ns
I
F = 4 A, VGS = 0,
diF/dt = 100 A/s
Note
1. Pulse Test
See characteristic curve of 2SK1957 and 2SJ410
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