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参数资料
| 型号： | 4N32VM |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 光电耦合器 |
| 英文描述： | General Purpose 6-Pin Photodarlington Optocoupler |
| 中文描述： | 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER |
| 封装： | DIP-6 |
| 文件页数： | 5/10页 |
| 文件大小： | 275K |
| 代理商： | 4N32VM |
2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
4NXXM, H11B1M, TIL113M Rev. 1.0.3
4
4N29M,
4N30M,
4N32M,
4N33M,
H11B1M,
TIL113M
—
General
Purpose
6-Pin
Photodarlington
Optocoupler
Electrical Characteristics (T
A = 25°C Unless otherwise specied.) (Continued)
Isolation Characteristics
* Indicates JEDEC registered data.
Notes:
1. The current transfer ratio(IC/IF) is the ratio of the detector collector current to the LED input current.
2. Pulse test: pulse width = 300s, duty cycle
≤ 2.0% .
3. IF adjusted to IC = 2.0mA and IC = 0.7mA rms.
4. The frequency at which IC is 3dB down from the 1kHz value.
5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Characteristic
Test Conditions
Device
Min.
Typ.
Max.
Units
VISO
Input-Output Isolation Voltage(5)
f = 60Hz, t = 1 sec.
All
7500
VACPEAK
VDC
4N32M*
2500
V
VDC
4N33M*
1500
RISO
Isolation Resistance(5)
VI-O = 500VDC
All
1011
CISO
Isolation Capacitance(5)
VI-O = , f = 1MHz
All
0.8
pF
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
I-IV
For Rated Main voltage < 300Vrms
I-IV
Climatic Classication
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
CTI
Comparative Tracking Index
175
VPR
Input to Output Test Voltage, Method b,
VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
1594
Vpeak
Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
Vpeak
VIORM
Max. Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over Voltage
6000
Vpeak
External Creepage
7
mm
External Clearance
7
mm
Insulation Thickness
0.5
mm
RIO
Insulation Resistance at Ts, VIO = 500V
109
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 4N32W | 功能描述:晶体管输出光电耦合器 Optocoupler Photodarlington RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N32-X000 | 功能描述:晶体管输出光电耦合器 Photodarlington Out Single CTR >500% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N32-X001 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR>500% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N32-X006 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR>500% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N32-X007 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR>500% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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