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参数资料
| 型号： | 4N35T |
| 厂商： | MOTOROLA INC |
| 元件分类： | 光电耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | PLASTIC, DIP-6 |
| 文件页数： | 1/6页 |
| 文件大小： | 276K |
| 代理商： | 4N35T |
1
Motorola Optoelectronics Device Data
6-Pin DIP Optoisolators
Transistor Output
The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon phototransistor detector.
Current Transfer Ratio — 100% Minimum @ Specified Conditions
Guaranteed Switching Speeds
Meets or Exceeds all JEDEC Registered Specifications
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
Regulation Feedback Circuits
Monitor & Detection Circuits
Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Reverse Voltage
VR
6
Volts
Forward Current — Continuous
IF
60
mA
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25
°C
PD
120
1.41
mW
mW/
°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
VCEO
30
Volts
Emitter–Base Voltage
VEBO
7
Volts
Collector–Base Voltage
VCBO
70
Volts
Collector Current — Continuous
IC
150
mA
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25
°C
PD
150
1.76
mW
mW/
°C
TOTAL DEVICE
Isolation Source Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25°C
Derate above 25
°C
PD
250
2.94
mW
mW/
°C
Ambient Operating Temperature Range(2)
TA
– 55 to +100
°C
Storage Temperature Range(2)
Tstg
– 55 to +150
°C
Soldering Temperature (10 sec, 1/16
″ from case)
TL
260
°C
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Preferred devices are Motorola recommended choices for future use and best overall value.
GlobalOptoisolator is a trademark of Motorola, Inc.
Order this document
by 4N35/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
GlobalOptoisolator
Motorola, Inc. 1995
4N35
4N36
4N37
*Motorola Preferred Device
*
SCHEMATIC
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
[CTR = 100% Min]
STANDARD THRU HOLE
CASE 730A–04
STYLE 1 PLASTIC
1
2
3
6
5
4
6
1
REV 2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 4N35TM | 功能描述:晶体管输出光电耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N35T-M | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
| 4N35TV | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
| 4N35TVM | 功能描述:晶体管输出光电耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N35TV-M | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
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