参数资料
型号: 4N35T
厂商: MOTOROLA INC
元件分类: 光电耦合器
英文描述: 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封装: PLASTIC, DIP-6
文件页数: 2/6页
文件大小: 276K
代理商: 4N35T
4N35 4N36 4N37
2
Motorola Optoelectronics Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ(1)
Max
Unit
INPUT LED
Forward Voltage (IF = 10 mA)
TA = 25°C
TA = –55°C
TA = 100°C
VF
0.8
0.9
0.7
1.15
1.3
1.05
1.5
1.7
1.4
V
Reverse Leakage Current (VR = 6 V)
IR
10
A
Capacitance (V = 0 V, f = 1 MHz)
CJ
18
pF
OUTPUT TRANSISTOR
Collector–Emitter Dark Current (VCE = 10 V, TA = 25°C)
Collector–Emitter Dark Current (VCE = 30 V, TA = 100°C)
ICEO
1
50
500
nA
A
Collector–Base Dark Current (VCB = 10 V)
TA = 25°C
TA = 100°C
ICBO
0.2
100
20
nA
Collector–Emitter Breakdown Voltage (IC = 1 mA)
V(BR)CEO
30
45
V
Collector–Base Breakdown Voltage (IC = 100 A)
V(BR)CBO
70
100
V
Emitter–Base Breakdown Voltage (IE = 100 A)
V(BR)EBO
7
7.8
V
DC Current Gain (IC = 2 mA, VCE = 5 V)
hFE
400
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0)
CCE
7
pF
Collector–Base Capacitance (f = 1 MHz, VCB = 0)
CCB
19
pF
Emitter–Base Capacitance (f = 1 MHz, VEB = 0)
CEB
9
pF
COUPLED
Output Collector Current
TA = 25°C
(IF = 10 mA, VCE = 10 V)
TA = –55°C
TA = 100°C
IC (CTR)(2)
10 (100)
4 (40)
30 (300)
mA (%)
Collector–Emitter Saturation Voltage (IC = 0.5 mA, IF = 10 mA)
VCE(sat)
0.14
0.3
V
Turn–On Time
(IC = 2 mA, VCC = 10 V,
RL = 100 )(3)
ton
7.5
10
s
Turn–Off Time
(IC = 2 mA, VCC = 10 V,
RL = 100 )(3)
toff
5.7
10
Rise Time
(IC = 2 mA, VCC = 10 V,
RL = 100 )(3)
tr
3.2
Fall Time
tf
4.7
Isolation Voltage (f = 60 Hz, t = 1 sec)
VISO
7500
Vac(pk)
Isolation Current(4) (VI–O = 3550 Vpk)
4N35
Isolation Current (VI–O = 2500 Vpk)
4N36
Isolation Current (VI–O = 1500 Vpk)
4N37
IISO
8
100
A
Isolation Resistance (V = 500 V)(4)
RISO
1011
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
CISO
0.2
2
pF
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For test circuit setup and waveforms, refer to Figure 11.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
相关PDF资料
PDF描述
4911 SINGLE COLOR LED
4N35-X001 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
4N37V 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
4N25-X009 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
4A1210EFPH-10 TRIGGER OUTPUT SOLID STATE RELAY, 4000 V ISOLATION-MAX
相关代理商/技术参数
参数描述
4N35TM 功能描述:晶体管输出光电耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk
4N35T-M 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
4N35TV 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
4N35TVM 功能描述:晶体管输出光电耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk
4N35TV-M 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS