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参数资料
| 型号： | 4N35V |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, PLASTIC, DIP-6 |
| 文件页数： | 3/8页 |
| 文件大小： | 134K |
| 代理商： | 4N35V |
Document Number: 83530
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 2.0, 26-Oct-09
141
4N25V, 4N25GV, 4N35V, 4N35GV
Optocoupler, Phototransistor Output Vishay Semiconductors
Note
(1) According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Derating Diagram
Fig. 2 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-; IEC 60747
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
IC/IF
VCE = 10 V, IF = 10 mA
4N25V
CTR
20
100
%
4N25GV
CTR
4N35V
CTR
100
150
%
4N35GV
CTR
VCE = 10 V, IF = 10 mA,
Tamb = 100 °C
4N35V
CTR
40
%
4N35GV
CTR
MAXIMUM SAFETY RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward current
IF
130
mA
OUTPUT
Power dissipation
Pdiss
265
mW
COUPLER
Rated impulse voltage
VIOTM
6kV
Safety temperature
Tsi
150
°C
INSULATION RATED PARAMETERS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Partial discharge test voltage -
routine test
100 %, ttest = 1 s
Vpd
1600
V
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM
6000
V
Vpd
1400
V
Insulation resistance
VIO = 500 V
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109
Ω
0
25
50
75
125
0
50
100
150
200
300
P
tot
-
Total
Po
w
er
Dissipation
(m
W
)
Tsi - Safety Temperature (°C)
150
94 9182
100
250
Phototransistor
Psi (mW)
IR-diode
Isi (mA)
t
13930
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VIOTM
VPd
VIOWM
VIORM
0
t1
ttest
tTr = 60 s
tstres
t3
t4
t2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 4N35-V | 功能描述:晶体管输出光电耦合器 Optocouplers RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N35VM | 功能描述:晶体管输出光电耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N35V-M | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P |
| 4N35VM | 制造商:Fairchild Semiconductor Corporation 功能描述:MOT TRANS OUTPUT VDE :ROHS COMPLIANT |
| 4N35V-M | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P |
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