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参数资料
| 型号： | 4N35V |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, PLASTIC, DIP-6 |
| 文件页数： | 4/8页 |
| 文件大小： | 134K |
| 代理商： | 4N35V |
www.vishay.com
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83530
142
Rev. 2.0, 26-Oct-09
4N25V, 4N25GV, 4N35V, 4N35GV
Vishay Semiconductors Optocoupler, Phototransistor Output
Fig. 3 - Test circuit, Non-Saturated Operation
Fig. 4 - Test Circuit, Saturated Operation
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Delay time
(see figure 3)
VS = 5 V, IC = 5 mA, RL = 100 Ω,
4N25V
4N25GV
td
4s
VS = 5 V, IC = 2 mA, RL = 100 Ω,
4N35V
4N35GV
td
2.5
s
Rise time
(see figure 3)
VS = 5 V, IC = 5 mA, RL = 100 Ω,
4N25V
4N25GV
tr
7s
VS = 5 V, IC = 2 mA, RL = 100 Ω,
4N35V
4N35GV
tr
3s
Fall time
(see figure 3)
VS = 5 V, IC = 5 mA, RL = 100 Ω,
4N25V
4N25GV
tf
6.7
s
VS = 5 V, IC = 2 mA, RL = 100 Ω,
4N35V
4N35GV
tf
4.2
s
Storage time
(see figure 3)
VS = 5 V, IC = 5mA, RL = 100 Ω,
4N25V
4N25GV
ts
0.3
s
VS = 5 V, IC = 2 mA, RL = 100 Ω,
4N35V
4N35GV
ts
0.3
s
Turn-on time
(see figure 3)
VS = 5 V, IC = 5 mA, RL = 100 Ω,
4N25V
4N25GV
ton
11
s
VS = 5 V, IC = 2 mA, RL = 100 Ω,
4N35V
4N35GV
ton
10
s
Turn-off time
(see figure 3)
VS = 5 V, IC = 5 mA, RL = 100 Ω,
4N25V
4N25GV
toff
7s
VS = 5 V, IC = 2 mA, RL = 100 Ω,
4N35V
4N35GV
toff
10
s
Turn-on time
(see figure 4)
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
4N25V
4N25GV
ton
25
s
4N35V
4N35GV
ton
9s
Turn-off time
(see figure 4)
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
4N25V
4N25GV
toff
42.5
s
4N35V
4N35GV
toff
25
s
Channel I
Channel II
14950
RG = 50
tp
tp = 50 s
T
= 0.01
+ 5 V
IC = 5 mA / 2 mA
adjusted through
input amplitude
IF
0
IF
50
100
Oscilloscope
RL 1 M
CL 20 pF
Channel I
Channel II
95 10844
RG = 50
tp
tp = 50 s
T
= 0.01
+ 5 V
IC
IF
0
IF = 10 mA
50
1 k
Oscilloscope
RL 1 M
CL 20 pF
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 4N35-V | 功能描述:晶体管输出光电耦合器 Optocouplers RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N35VM | 功能描述:晶体管输出光电耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N35V-M | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P |
| 4N35VM | 制造商:Fairchild Semiconductor Corporation 功能描述:MOT TRANS OUTPUT VDE :ROHS COMPLIANT |
| 4N35V-M | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER TRANSISTOR O/P |
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