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参数资料
| 型号： | 5082-2800#T50 |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, MIXER DIODE |
| 封装： | GLASS PACKAGE-2 |
| 文件页数： | 1/7页 |
| 文件大小： | 249K |
| 代理商： | 5082-2800#T50 |
1N5711, 1N5712, 5082-2800 Series
Schottky Barrier Diodes for
General Purpose Applications
Data Sheet
Description/Applications
The 1N5711, 1N5712, 5082-2800/10/11 are passivated
Schottky barrier diodes which use a patented “guard ring”
design to achieve a high breakdown voltage. Packaged in
a low cost glass package, they are well suited for high level
detecting, mixing, switching, gating, log or A-D converting,
video detecting, frequency discriminating, sampling, and
wave shaping.
The 5082-2835 is a passivated Schottky diode in a low cost
glass package. It is optimized for low turn-on voltage. The
5082-2835 is particularly well suited for the UHF mixing
needs of the CATV marketplace.
Outline 15
Maximum Ratings
Junction Operating and Storage Temperature Range
1N5711, 1N5712, 5082-2800/10/11..... -65°C to +200°C
5082-2835 ..................................................... -60°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at T
CASE = 25°C)
Derate linearly to zero at maximum rated temp.
1N5711, 1N5712, 5082-2800/10/11.....................250 mW
5082-2835 .....................................................................150 mW
Peak Inverse Voltage ................................................................ V
BR
Features
Low Turn-On Voltage As Low as 0.34 V at 1 mA
Pico Second Switching Speed
High Breakdown Voltage Up to 70 V
Matched Characteristics Available
0.41 (.016)
0.36 (.014)
25.4 (1.00)
MIN.
25.4 (1.00)
MIN.
1.93 (.076)
1.73 (.068)
CATHODE
DIMENSIONS IN MILLIMETERS AND (INCHES).
4.32 (.170)
3.81 (.150)
相关PDF资料 |
PDF描述 |
|---|---|
| 5082-2800#T25 | SILICON, MIXER DIODE |
| 5082-2835 | SILICON, UHF BAND, MIXER DIODE |
| 5082-2811#T25 | SILICON, MIXER DIODE |
| 5082-2835#T25 | SILICON, UHF BAND, MIXER DIODE |
| 5082-2810 | SILICON, MIXER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 5082-2804 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PIN Diodes for RF Switching and Attenuating Schottky Diodes (57K in pdf) |
| 5082-2805 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PIN Diodes for RF Switching and Attenuating Schottky Diodes (57K in pdf) |
| 5082-2810 | 功能描述:肖特基二极管与整流器 20 VBR 1.2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 5082-2810#T25 | 功能描述:肖特基二极管与整流器 20 VBR 1.2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 50822811 | 制造商:HP 功能描述:353-3691-050 制造商:n/a 功能描述:HP5082-2811 |
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