- 您现在的位置：买卖IC网 > PDF目录91181 > 5082-2800#T50 SILICON, MIXER DIODE PDF资料下载
参数资料
| 型号： | 5082-2800#T50 |
| 元件分类： | 射频混频器 |
| 英文描述： | SILICON, MIXER DIODE |
| 封装： | GLASS PACKAGE-2 |
| 文件页数： | 5/7页 |
| 文件大小： | 249K |
| 代理商： | 5082-2800#T50 |
5
Typical Parameters, continued
Notes:
Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution
VF - FORWARD VOLTAGE (V)
Figure 6. I-V Curve Showing Typical Temperature
Variation for the 5082-2811 Schottky Diode.
100
10
1.0
0.1
0.01
I F
-FORWARD
CURRENT
(mA)
0
0.4
0.2
0.6
0.8
1.0
1.2
–50 C
0 C
+25 C
+50 C
+100 C
+150 C
VR - REVERSE VOLTAGE (V)
Figure 7. (5082-2811) Typical Variation of Reverse
Current (IR) vs. Reverse Voltage (VR) at Various
Temperatures.
100,000
10,000
1000
100
10
1
I R
-REVERSE
CURRENT
(nA)
0
5
10
15
20
25
30
150
100
50
25
TA = C
VF - FORWARD VOLTAGE (V)
Figure 8. I-V Curve Showing Typical Temperature
Variations for 5082-2835 Schottky Diode.
100
10
1.0
0.1
0.01
I F
-FORWARD
CURRENT
(mA)
0
0.2
0.4
0.6
0.8
1.0
1.2
+150 C
+100 C
+50 C
+25 C
0 C
–50 C
VR - REVERSE VOLTAGE (V)
Figure 9. (5082-2835) Typical Variation of Reverse
Current (IR) vs. Reverse Voltage (VR) at Various
Temperatures.
100,000
10,000
1000
100
10
1
I R
-REVERSE
CURRENT
(nA)
0
1
2
3
4
5
6
+150 C
+125 C
+100 C
+75 C
+50 C
+25 C
VR - REVERSE VOLTAGE (V)
Figure 10. Typical Capacitance (CT) vs. Reverse
Voltage (VR).
11.4
1.2
1.0
0.8
0.6
0.4
0.2
0
C T
-CAPACITANCE
(pF)
0
2
4
6
8
10
5082-2810/2811
1N5712
5082-2835
IF - FORWARD CURRENT (mA)
Figure 11. Typical Dynamic Resistance (RD) vs.
Forward Current (IF).
1000
100
10
1
R D
-DYNAMIC
RESISTANCE
()
0
2
4
6
8
10
5082-2800, 1N5711
5082-2811
1N5712
5082-2835
相关PDF资料 |
PDF描述 |
|---|---|
| 5082-2800#T25 | SILICON, MIXER DIODE |
| 5082-2835 | SILICON, UHF BAND, MIXER DIODE |
| 5082-2811#T25 | SILICON, MIXER DIODE |
| 5082-2835#T25 | SILICON, UHF BAND, MIXER DIODE |
| 5082-2810 | SILICON, MIXER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 5082-2804 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PIN Diodes for RF Switching and Attenuating Schottky Diodes (57K in pdf) |
| 5082-2805 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PIN Diodes for RF Switching and Attenuating Schottky Diodes (57K in pdf) |
| 5082-2810 | 功能描述:肖特基二极管与整流器 20 VBR 1.2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 5082-2810#T25 | 功能描述:肖特基二极管与整流器 20 VBR 1.2 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 50822811 | 制造商:HP 功能描述:353-3691-050 制造商:n/a 功能描述:HP5082-2811 |
发布紧急采购，3分钟左右您将得到回复。