参数资料
型号: 5082-2811#T25
元件分类: 射频混频器
英文描述: SILICON, MIXER DIODE
封装: GLASS PACKAGE-2
文件页数: 4/7页
文件大小: 249K
代理商: 5082-2811#T25
4
Typical Parameters
Notes:
Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution
VF - FORWARD VOLTAGE (V)
Figure 1. I-V Curve Showing Typical
Temperature Variation for 5082-2800 or
1N5711 Schottky Diodes.
50
10
5
1
0.5
0.1
0.05
0.01
I F
-FORWARD
CURRENT
(mA)
0
0.2
0.4
0.6
0.8
1.0
1.2
–50 C
0 C
+25 C
+100 C
+150 C
+50 C
Figure 2. (5082-2800 OR 1N5711) Typical
Variation of Reverse Current (IR) vs. Reverse
Voltage (VR) at Various Temperatures.
VR - REVERSE VOLTAGE (V)
Figure 3. (5082-2800 or 1N5711) Typical
Capacitance (CT) vs. Reverse Voltage (VR).
12.0
1.5
1.0
0.5
0
C T
-CAPACITANCE
(pF)
0
10
20
30
40
50
VF - FORWARD VOLTAGE (V)
Figure 4. I-V Curve Showing Typical Temperature
Variation for the 5082-2810 or 1N5712 Schottky
Diode.
100
10
1.0
0.1
0.01
I F
-FORWARD
CURRENT
(mA)
0
0.4
0.2
0.6
0.8
1.0
1.2
–50 C
0 C
+25 C
+50 C
+100 C
+150 C
VR - REVERSE VOLTAGE (V)
Figure 5. (5082-2810 or 1N5712) Typical
Variation of Reverse Current (IR) vs. Reverse
Voltage (VR) at Various Temperatures.
10,000
1000
100
10
1.0
I R
-REVERSE
CURRENT
(nA)
0
10
5
15
20
25
30
150
125
100
75
50
25
TA = C
VR - REVERSE VOLTAGE (V)
100,000
10,000
1000
100
10
1
I R
-REVERSE
CURRENT
(nA
)
0
20
40
60
80
100
120
150
125
100
50
25
75
0
TA = °C
相关PDF资料
PDF描述
5082-2835#T25 SILICON, UHF BAND, MIXER DIODE
5082-2810 SILICON, MIXER DIODE
5082-2835#T50 SILICON, UHF BAND, MIXER DIODE
5082-2800 SILICON, MIXER DIODE
5082-2810#T25 SILICON, MIXER DIODE
相关代理商/技术参数
参数描述
5082-2817 制造商:ASI 制造商全称:ASI 功能描述:MEDIUM BARRIER SCHOTTKY DIODE
5082-2818 制造商:ASI 制造商全称:ASI 功能描述:MEDIUM BARRIER SCHOTTKY DIODE
5082-2818_05 制造商:ASI 制造商全称:ASI 功能描述:MEDIUM BARRIER SCHOTTKY DIODE
5082-2824 制造商:ASI 制造商全称:ASI 功能描述:SCHOTTKY BARRIER DIODE
5082-2826 制造商:Avago Technologies 功能描述: