参数资料
型号: 5082-2811#T25
元件分类: 射频混频器
英文描述: SILICON, MIXER DIODE
封装: GLASS PACKAGE-2
文件页数: 5/7页
文件大小: 249K
代理商: 5082-2811#T25
5
Typical Parameters, continued
Notes:
Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution
VF - FORWARD VOLTAGE (V)
Figure 6. I-V Curve Showing Typical Temperature
Variation for the 5082-2811 Schottky Diode.
100
10
1.0
0.1
0.01
I F
-FORWARD
CURRENT
(mA)
0
0.4
0.2
0.6
0.8
1.0
1.2
–50 C
0 C
+25 C
+50 C
+100 C
+150 C
VR - REVERSE VOLTAGE (V)
Figure 7. (5082-2811) Typical Variation of Reverse
Current (IR) vs. Reverse Voltage (VR) at Various
Temperatures.
100,000
10,000
1000
100
10
1
I R
-REVERSE
CURRENT
(nA)
0
5
10
15
20
25
30
150
100
50
25
TA = C
VF - FORWARD VOLTAGE (V)
Figure 8. I-V Curve Showing Typical Temperature
Variations for 5082-2835 Schottky Diode.
100
10
1.0
0.1
0.01
I F
-FORWARD
CURRENT
(mA)
0
0.2
0.4
0.6
0.8
1.0
1.2
+150 C
+100 C
+50 C
+25 C
0 C
–50 C
VR - REVERSE VOLTAGE (V)
Figure 9. (5082-2835) Typical Variation of Reverse
Current (IR) vs. Reverse Voltage (VR) at Various
Temperatures.
100,000
10,000
1000
100
10
1
I R
-REVERSE
CURRENT
(nA)
0
1
2
3
4
5
6
+150 C
+125 C
+100 C
+75 C
+50 C
+25 C
VR - REVERSE VOLTAGE (V)
Figure 10. Typical Capacitance (CT) vs. Reverse
Voltage (VR).
11.4
1.2
1.0
0.8
0.6
0.4
0.2
0
C T
-CAPACITANCE
(pF)
0
2
4
6
8
10
5082-2810/2811
1N5712
5082-2835
IF - FORWARD CURRENT (mA)
Figure 11. Typical Dynamic Resistance (RD) vs.
Forward Current (IF).
1000
100
10
1
R D
-DYNAMIC
RESISTANCE
()
0
2
4
6
8
10
5082-2800, 1N5711
5082-2811
1N5712
5082-2835
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5082-2835#T25 SILICON, UHF BAND, MIXER DIODE
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