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参数资料
| 型号： | 5082-2826 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 整流器 |
| 英文描述： | SILICON, RECTIFIER DIODE |
| 文件页数： | 4/6页 |
| 文件大小： | 52K |
| 代理商： | 5082-2826 |
4
Typical Parameters
VF – FORWARD VOLTAGE (V)
Figure 1. I-V Curve Showing Typical
Temperature Variation for 5082-2300
Series and 5082-2900 Schottky Diodes.
100
10
1
0.1
0.01
I F
-
FORWARD
CURRENT
(mA)
0
0.10
0.20
0.30
0.40
0.50
0.60
100
°C
50
°C
25
°C
0
°C
–50
°C
VBR (V)
Figure 2. 5082-2300 Series Typical
Reverse Current vs. Reverse Voltage
at Various Temperatures.
10.000
1,000
100
10
1
I R
(nA)
0
5
10
15
100
75
50
25
TA = 25°C
IF - FORWARD CURRENT (mA)
Figure 3. 5082-2300 Series and 5082-2900
Typical Dynamic Resistance (RD) vs.
Forward Current (IF).
1000
100
10
R
D
-
DYNAMIC
RESISTANCE
(
)
0.01
0
10
100
VR - REVERSE VOLTAGE (V)
Figure 4. 5082-2300 and 5082-2900
Typical Capacitance vs. Reverse
Voltage.
1.2
1.0
0.8
0.6
0.4
0.2
0
C
T
-
CAPACITANCE
(pF)
0
4
8
121620
5082-2900
5082-2303
VF - FORWARD VOLTAGE (V)
Figure 5. I-V Curve Showing Typical
Temperature Variation for 5082-2800
or 1N5711 Schottky Diodes.
50
10
5
1
0.5
0.1
0.05
0.01
I F
-
FORWARD
CURRENT
(mA)
0
0.2
0.4
0.6
0.8
1.0
1.2
–50
°C
0
°C
+25
°C
+100
°C
+150
°C
+50
°C
VR - REVERSE VOLTAGE (V)
Figure 6. (5082-2800 OR 1N5711)
Typical Variation of Reverse Current
(IR) vs. Reverse Voltage (VR) at
Various Temperatures.
100,000
10,000
1000
100
10
1
I R
-
REVERSE
CURRENT
(nA)
0
0.2
0.4
0.6
0.8
1.0
1.2
150
125
100
50
25
75
0
TA = °C
VR - REVERSE VOLTAGE (V)
Figure 7. (5082-2800 or 1N5711)
Typical Capacitance (CT) vs. Reverse
Voltage (VR).
12.0
1.5
1.0
0.5
0
C
T
-
CAPACITANCE
(pF)
010
20
30
40
50
VF - FORWARD VOLTAGE (V)
Figure 8. I-V Curve Showing Typical
Temperature Variation for the 5082-
2810 or 1N5712 Schottky Diode.
100
10
1.0
0.1
0.01
I F
-
FORWARD
CURRENT
(mA)
0
0.4
0.2
0.6
0.8
1.0
1.2
–50
°C
0
°C
+25
°C
+50
°C
+100
°C
+150
°C
VR - REVERSE VOLTAGE (V)
Figure 9. (5082-2810 or IN5712)
Typical Variation of Reverse Current
(IR) vs. Reverse Voltage (VR) at
Various Temperatures.
10,000
1000
100
10
1.0
I R
-
REVERSE
CURRENT
(nA)
010
515
20
25
30
150
125
100
75
50
25
TA = °C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 5082-2830 | 制造商:ASI 制造商全称:ASI 功能描述:SCHOTTKY BARRIER DUAL DIODE |
| 5082-2835 | 功能描述:肖特基二极管与整流器 8 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 5082-2835#T25 | 功能描述:肖特基二极管与整流器 8 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 5082-2835#T50 | 功能描述:肖特基二极管与整流器 8 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 5082-2835 | 制造商:Avago Technologies 功能描述:DIODE RF SCHOTTKY |
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