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参数资料
| 型号： | 5082-2826 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 整流器 |
| 英文描述： | SILICON, RECTIFIER DIODE |
| 文件页数： | 5/6页 |
| 文件大小： | 52K |
| 代理商： | 5082-2826 |
5
Typical Parameters, continued
VF - FORWARD VOLTAGE (V)
Figure 10. I-V Curve Showing Typical
Temperature Variation for the 5082-2811
Schottky Diode.
100
10
1.0
0.1
0.01
I F
-
FORWARD
CURRENT
(mA)
0
0.4
0.2
0.6
0.8
1.0
1.2
–50
°C
0
°C
+25
°C
+50
°C
+100
°C
+150
°C
VR - REVERSE VOLTAGE (V)
Figure 11. (5082-2811) Typical Variation
of Reverse Current (IR) vs. Reverse
Voltage (VR) at Various Temperatures.
100,000
10,000
1000
100
10
1
I R
-
REVERSE
CURRENT
(nA)
0
5
10
15
20
25
30
150
100
50
25
TA = °C
VF - FORWARD VOLTAGE (V)
Figure 12. I-V Curve Showing Typical
Temperature Variations for 5082-2835
Schottky Diode.
100
10
1.0
0.1
0.01
I F
-
FORWARD
CURRENT
(mA)
0
0.2
0.4
0.6
0.8
1.0
1.2
+150
°C
+100
°C
+50
°C
+25
°C
0
°C
–50
°C
VR - REVERSE VOLTAGE (V)
Figure 13. (5082-2835) Typical Variation
of Reverse Current (IR) vs. Reverse
Voltage (VR) at Various Temperatures.
100,000
10,000
1000
100
10
1
I R
-
REVERSE
CURRENT
(nA)
01
2
3
4
5
6
+150
°C
+125
°C
+100
°C
+75
°C
+50
°C
+25
°C
VR - REVERSE VOLTAGE (V)
Figure 14. Typical Capacitance (CT) vs.
Reverse Voltage (VR).
11.4
1.2
1.0
0.8
0.6
0.4
0.2
0
C
T
-
CAPACITANCE
(pF)
0
2468
10
5082-2810/2811
IN5712
5082-2835
IF - FORWARD CURRENT (mA)
Figure 15. Typical Dynamic Resistance
(RD) vs. Forward Current (IF).
1000
100
10
1
R
D
-
DYNAMIC
RESISTANCE
(
)
0
2468
10
5082-2800, 1N5711
5082-2811
1N5712
5082-2835
Diode Package Marking
HPX
XXX
YZZ
where XXX are the last three digits of the 5082-XXXX
part number, Y is the last digit of the calendar year,
and ZZ is the work week of manufacture.
For example, a 5082-2811 manufactured during the
35th work week of 1996 would be marked
HP2
811
635
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 5082-2830 | 制造商:ASI 制造商全称:ASI 功能描述:SCHOTTKY BARRIER DUAL DIODE |
| 5082-2835 | 功能描述:肖特基二极管与整流器 8 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 5082-2835#T25 | 功能描述:肖特基二极管与整流器 8 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 5082-2835#T50 | 功能描述:肖特基二极管与整流器 8 VBR 1 pF RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 5082-2835 | 制造商:Avago Technologies 功能描述:DIODE RF SCHOTTKY |
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