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参数资料
| 型号： | 5962-89494022A |
| 厂商： | TEXAS INSTRUMENTS INC |
| 元件分类： | 运算放大器 |
| 英文描述： | DUAL OP-AMP, 3750 uV OFFSET-MAX, 1.7 MHz BAND WIDTH, CQCC20 |
| 封装： | CERAMIC, LCC-20 |
| 文件页数： | 12/50页 |
| 文件大小： | 1132K |
| 代理商： | 5962-89494022A |
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TLC272, TLC272A, TLC272B, TLC272Y, TLC277
LinCMOS
PRECISION DUAL OPERATIONAL AMPLIFIERS
SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
description (continued)
AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
TA
VIOmax
AT 25
°C
SMALL
OUTLINE
(D)
CHIP
CARRIER
(FK)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(P)
TSSOP
(PW)
CHIP
FORM
(Y)
500
V
TLC277CD
—
TLC277CP
—
0
°Cto70°c
500
V
2 mV
TLC277CD
TLC272BCD
—
TLC277CP
TLC272BCP
—
0
°C to 70°c
2 mV
5 mV
TLC272BCD
TLC272ACD
—
TLC272BCP
TLC272ACP
—
5 mV
10mV
TLC272ACD
TLC272CD
—
TLC272ACP
TLC272CP
TLC272CPW
TLC272Y
500
V
TLC277ID
—
TLC277IP
—
40
°Cto85°C
500
V
2 mV
TLC277ID
TLC272BID
—
TLC277IP
TLC272BIP
—
– 40
°C to 85°C
2 mV
5 mV
TLC272BID
TLC272AID
—
TLC272BIP
TLC272AIP
—
5 mV
10 mV
TLC272AID
TLC272ID
—
TLC272AIP
TLC272IP
—
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC277CDR).
In general, many features associated with bipolar technology are available on LinCMOS
operational amplifiers
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and
TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote
and inaccessible battery-powered applications. The common-mode input voltage range includes the negative
rail.
A wide range of packaging options is available, including small-outline and chip carrier versions for high-density
system applications.
The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.
The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages
up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling
these devices as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0
°C to 70°C. The I-suffix devices are characterized
for operation from – 40
°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of – 55
°C to 125°C.
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