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参数资料
| 型号： | 5962R8771003VPA |
| 厂商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分类： | 运算放大器 |
| 英文描述： | DUAL OP-AMP, 4000 uV OFFSET-MAX, 1 MHz BAND WIDTH, CDIP8 |
| 封装： | CERAMIC, DIP-8 |
| 文件页数： | 21/26页 |
| 文件大小： | 494K |
| 代理商： | 5962R8771003VPA |
Absolute Maximum Ratings (Note 2)
Supply Voltage, V+
32V
DC
Differential Input Voltage
32V
DC
Input Voltage
0.3V
DC to +32VDC
Power Dissipation (Note 3)
830 mW
Output Short-Circuit to GND(Note 4)
(One Amplifier)
V+
≤ 15V
DC and TA = 25°C
Continuous
Maximum Junction Temperature (T
Jmax)
150°C
Input Current (V
I < 0.3V)(Note 5)
50 mA
Operating Temperature Range
55°C
≤ T
A ≤ +125°C
Storage Temperature Range
65°C
≤ T
A ≤ +150°C
Lead Temperature
(Soldering, 10 seconds)
Metal Can
300°C
Ceramic DIP
260°C
Ceramic SOIC
260°C
Thermal Resistance
θ
JA
Metal Can (Still Air)
155°C/W
Metal Can (500LF/Min Air Flow)
80°C/W
Ceramic DIP (Still Air)
132°C/W
Ceramic DIP (500LF/Min Air Flow)
81°C/W
Ceramic SOIC (Still Air)
195°C/W
Ceramic SOIC (500LF/Min Air Flow)
131°C/W
θ
JC
Metal Can
42°C/W
Ceramic DIP
23°C/W
Ceramic SOIC
33°C/W
Package Weight
Metal Can
1,000mg
Ceramic DIP
1,100mg
Ceramic SOIC
220mg
ESD Tolerance (Note 8)
250V
Quality Conformance Inspection
Mil-Std-883, Method 5005 - Group A
Subgroup
Description
Temp °C
1
Static tests at
+25
2
Static tests at
+125
3
Static tests at
-55
4
Dynamic tests at
+25
5
Dynamic tests at
+125
6
Dynamic tests at
-55
7
Functional tests at
+25
8A
Functional tests at
+125
8B
Functional tests at
-55
9
Switching tests at
+25
10
Switching tests at
+125
11
Switching tests at
-55
12
Settling time at
+25
13
Settling time at
+125
14
Settling time at
-55
www.national.com
4
LM158QML
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