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参数资料
| 型号： | 5LN01C-TB-E |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 50V 100MA 3CP |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 100mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.8 欧姆 @ 50mA，4V |
| 闸电荷(Qg) @ Vgs： | 1.57nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6.6pF @ 10V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | 3-CP |
| 包装： | 带卷 (TR) |
Ordering number : EN6555C
5LN01C
N-Channel Small Signal MOSFET
50V, 0.1A, 7.8 Ω , Single CP
Features
http://onsemi.com
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Low ON-resistance
Ultrahigh-speed switching
2.5V drive
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
50
±10
0.1
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
0.4
0.25
150
--55 to +150
A
W
°C
°C
This product is designed to “ESD immunity < 200V * ”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Ordering & Package Information
unit : mm (typ)
7013A-013
Device
5LN01C-TB-E
Package
CP
SC-59, TO-236,
SOT-23, TO-236AB
Shipping
3,000pcs./
reel
memo
Pb-Free
2.9
3
0.1
5LN01C-TB-E
5LN01C-TB-H
5LN01C-TB-H
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000pcs./
reel
Pb-Free
and
Halogen Free
1
0.95
2
0.4
Packing Type: TB
Marking
1 : Gate
2 : Source
3 : Drain
CP
TB
Electrical Connection
YB
3
1
2
Semiconductor Components Industries, LLC, 2013
June, 2013
62613 TKIM TC-00002951/62712 TKIM/33106PE MSIM TB-00002196/71400 TSIM TA-2050 No.6555-1/6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 5LN01C-TB-H | 功能描述:MOSFET NCH 1.5V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 5LN01M | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 5LN01M_06 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 5LN01M_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 5LN01M-TL-E | 功能描述:MOSFET RoHS:否 制造商:NXP Semiconductors 晶体管极性:N-Channel 汲极/源极击穿电压:30 V 闸/源击穿电压: 漏极连续电流:180 mA 电阻汲极/源极 RDS（导通）:4.5 Ohms 配置: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-416 封装:Reel |
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