参数资料
型号: 60MT80KB
元件分类: 桥式整流
英文描述: 3 PHASE, 60 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
封装: INT-A-PAK-6
文件页数: 5/7页
文件大小: 95K
代理商: 60MT80KB
60-70MT..KB Series
5
Bulletin I27500 rev. A 05/03
www.irf.com
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 6 - Current Ratings Characteristics
50
60
70
80
90
100
110
120
130
140
150
0
2040
6080
100
Ma
x
imu
m
A
llo
w
a
b
le
C
as
e
T
e
m
p
e
ra
tu
re
C)
Total Output Current (A)
120°
(Rect)
70MT..KB Series
1
10
100
1000
01
23
4
5
T= 25°C
J
In
s
tan
ta
n
e
ou
s
F
o
rw
a
rd
C
u
rr
e
n
t
(A
)
Instantaneous Forward Voltage (V)
70MT..KB Series
Per Junction
T = 150°C
J
Fig. 3 - Total Power Loss Characteristics
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
R
=
0.0
5
K
/W
-
D
elt
a
R
th
S
A
0.1
2
K
/W
0.2
K
/W
0.3
K/W
0.5
K/W
0.7
K/W
1 K/W
1.5 K/W
0
25
50
75
100
125
150
175
200
225
250
0
1020
304050607080
Total Output Current (A)
Ma
xi
m
u
m
T
ota
lP
o
w
e
r
L
os
s
(W
)
120°
(Rect)
60MT..KB Series
T = 150°C
J
100
150
200
250
300
350
400
110
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Initial T = 150°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Pe
a
k
H
a
lf
Si
n
e
W
a
v
e
F
o
rw
a
rd
C
u
rr
e
n
t
(A
)
60MT..KB Series
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
J
50
100
150
200
250
300
350
400
450
0.01
0.1
1
P
e
a
k
Ha
lf
S
ine
W
a
ve
F
o
rw
ar
d
C
u
rr
e
nt
(A
)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Initial T = 150°C
No Voltage Reapplied
Rated V
Reapplied
Versus Pulse Train Duration.
RRM
60MT..KB Series
J
相关PDF资料
PDF描述
60MT100KBPBF 3 PHASE, 60 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
60MT80KBPBF 3 PHASE, 60 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
60MT100KB 3 PHASE, 60 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
60MT120KBPBF 3 PHASE, 60 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
60MT100KBPBF 3 PHASE, 60 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
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