参数资料
型号: 60MT80KB
元件分类: 桥式整流
英文描述: 3 PHASE, 60 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
封装: INT-A-PAK-6
文件页数: 6/7页
文件大小: 95K
代理商: 60MT80KB
60-70MT..KB Series
6
Bulletin I27500 rev. A 05/03
www.irf.com
Fig. 8 - Total Power Loss Characteristics
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
R
=
0.0
5
K
/W
- D
elt
a
R
0.1K
/W
0.2
K/W
0.3
K/W
0.5
K/W
0.7
K/W
1.5 K/W
th
S
A
1 K/W
0
50
100
150
200
250
300
0
10
20
30
40
50
60
70
80
90
Total Output Current (A)
Ma
xi
m
u
m
T
o
ta
l
P
o
w
e
r
L
o
s
(W
)
120°
(Rect)
70MT..KB Series
T= 150°C
J
100
150
200
250
300
350
400
450
110
100
P
eak
Hal
f
Si
n
e
Wav
e
Fo
rw
ar
d
C
u
rr
e
n
t
(A
)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
70MT..KB Series
Initial T = 150°C
@60 Hz 0.0083s
@50 Hz 0.0100s
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
J
100
150
200
250
300
350
400
450
500
0.01
0.1
1
P
e
a
k
H
a
lf
Si
n
e
W
a
ve
F
o
rw
a
rd
C
ur
rent
(A
)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
70MT..KB Series
Initial T = 150°C
No Voltage Reapplied
Rated V
Reapplied
RRM
Versus Pulse Train Duration.
J
Fig. 11 - Thermal Impedance Z
thJC
Characteristic
0.01
0.1
1
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
JC
T
ra
n
s
ien
t
T
he
rm
a
l
Im
p
e
d
a
n
c
e
Z
(K
/W
)
70MT..KB Series
60MT..KB Series
Per Junction
Steady State Value
R= 2.22 K/W
R= 1.75 K/W
(DC Operation)
thJC
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60MT100KBPBF 3 PHASE, 60 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
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