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参数资料
| 型号： | 63CPQ080G |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 80 V, SILICON, RECTIFIER DIODE, TO-247AC |
| 封装： | PLASTIC, TO-3P, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 207K |
| 代理商： | 63CPQ080G |
63CPQ100G
Preliminary Data Sheet PD-20820 09/04
2
Part number
63CPQ100G
V
R
Max. DC Reverse Voltage (V)
V
RWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
100
V
FM
Max. Forward Voltage Drop
0.77
V
@ 30A
(Per Leg) * See Fig. 1
(1)
0.92
V
@ 60A
0.64
V
@ 30A
0.76
V
@ 60A
I
RM
Max. Reverse Leakage Current
0.3
mA
T
J =
25 °C
(Per Leg) * See Fig. 2
(1)
25
mA
T
J = 125 °C
VF(TO) Threshold Voltage
0.38
V
T
J = TJ max.
rt
Forward Slope Resistance
5.75
mW
CT
Max. Junction Capacitance (Per Leg)
1300
pF
V
R = 5VDC (test signal range 100Khz to 1Mhz) 25°C
L
S
Typical Series Inductance (Per Leg)
7.5
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/ s (Rated V
R)
T
J
Max.JunctionTemperatureRange
-55to175
°C
Tstg
Max.StorageTemperatureRange
-55to175
°C
R
thJC Max.ThermalResistanceJunction
0.8
°C/W DC operation
to Case (Per Leg) * See Fig. 4
R
thJC Max.ThermalResistanceJunction
0.4
°C/W DC operation
toCase(Per Package)
R
thCS TypicalThermalResistance,Case
0.25
°C/W Mounting surface,smooth and greased
toHeatsink
wt
ApproximateWeight
6(0.21)
g(oz.)
T
MountingTorque
Min.
6(5)
Max.
12(10)
CaseStyle
TO-247AC(TO-3P) JEDEC
MarkingDevice
63CPQ100G
Thermal-Mechanical Specifications
Kg-cm
(Ibf-in)
T
J =
25 °C
T
J = 125 °C
Electrical Specifications
(1) Pulse Width < 300s, Duty Cycle <2%
V
R = rated VR
Absolute Maximum Ratings
Parameters
63CPQ Units
Conditions
I
F(AV) Max. Average Forward
(Per Leg)
30
A
50% duty cycle @ T
C = 153°C, rectangular wave form
Current
* See Fig. 5
(Per Device)
60
I
FSM
Max.PeakOneCycleNon-Repetitive
2200
5s Sine or 3s Rect. pulse
Surge Current (Per Leg) * See Fig. 7
410
10ms Sine or 6ms Rect. pulse
E
AS
Non-RepetitiveAvalancheEnergy
15
mJ
T
J = 25 °C, IAS = 1 Amps, L = 30 mH
(Per Leg)
I
AR
RepetitiveAvalancheCurrent
1
A
Current decaying linearly to zero in 1 sec
(Per Leg)
Frequency limited by T
J max. VA = 1.5 x VR typical
A
Parameters
63CPQ Units
Conditions
Following any rated
load condition and with
rated V
RRM applied
Parameters
63CPQ Units
Conditions
相关PDF资料 |
PDF描述 |
|---|---|
| 63CPQ100-C | 30 A, SILICON, RECTIFIER DIODE, TO-247AD |
| 63CPQ080 | 30 A, SILICON, RECTIFIER DIODE, TO-247AD |
| 63CPQ080-G | 30 A, SILICON, RECTIFIER DIODE, TO-247AD |
| 63CPQ100 | 30 A, SILICON, RECTIFIER DIODE, TO-247AD |
| 63CPQ100-G | 30 A, SILICON, RECTIFIER DIODE, TO-247AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 63CPQ100 | 功能描述:肖特基二极管与整流器 60 Amp 100 Volt Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 63CPQ100G | 功能描述:肖特基二极管与整流器 60 Amp 100 Volt Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 63CPQ100G-N3 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 30 A |
| 63CPQ100GPBF | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 100V 60A 3-Pin(3+Tab) TO-247AC |
| 63CPQ100GPBF_12 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 30 A |
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