参数资料
型号: 7140SA25PFGI
厂商: INTEGRATED DEVICE TECHNOLOGY INC
元件分类: SRAM
英文描述: 1K X 8 DUAL-PORT SRAM, 25 ns, PQFP64
封装: 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-64
文件页数: 8/19页
文件大小: 149K
代理商: 7140SA25PFGI
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
Military, Industrial and Commercial Temperature Ranges
16
Truth Table I — Non-Contention Read/Write Control(4)
Truth Tables
Truth Table II — Interrupt Flag(1,4)
Truth Table III — Address BUSY
Arbitration
NOTES:
1. Pins
BUSYL and BUSYR are both outputs for IDT7130 (master). Both are inputs for
IDT7140 (slave).
BUSYX outputs on the IDT7130 are open drain, not push-pull
outputs. On slaves the
BUSYX input internally inhibits writes.
2. 'L' if the inputs to the opposite port were stable prior to the address and enable inputs
of this port. 'H' if the inputs to the opposite port became stable after the address and
enable inputs of this port. If tAPS is not met, either
BUSYL or BUSYR = LOW will
result.
BUSYL and BUSYR outputs can not be LOW simultaneously.
3. Writes to the left port are internally ignored when
BUSYL outputs are driving LOW
regardless of actual logic level on the pin. Writes to the right port are internally
ignored when
BUSYR outputs are driving LOW regardless of actual logic level on
the pin.
NOTES:
1. A0L – A10L A0R – A10R.
2. If
BUSY = L, data is not written.
3. If
BUSY = L, data may not be valid, see tWDD and tDDD timing.
4. 'H' = VIH, 'L' = VIL, 'X' = DON’T CARE, 'Z' = HIGH IMPEDANCE
NOTES:
1. Assumes
BUSYL = BUSYR = VIH
2. If
BUSYL = VIL, then No Change.
3. If
BUSYR = VIL, then No Change.
4. 'H' = HIGH,' L' = LOW,' X' = DON’T CARE
Inputs(1)
Function
R/
W
CE
OE
D0-7
X
H
X
Z
Port Disabled and in Power-Down Mode, ISB2 or ISB4
XH
X
Z
CER = CEL = VIH, Power-Down Mode, ISB1 or ISB3
LL
X
DATAIN
Data on Port Written into Memory(2)
HL
L
DATAOUT
Data in Memory Output on Port
(3)
H
L
H
Z
High Impedance Outputs
2689 tbl 13
Left Port
Right Port
Function
R/
WL
CEL
OEL
A9L-A0L
INTL
R/
WR
CER
OER
A9R-A0R
INTR
L
X3FF
XXXX
X
L(2)
Set Right
INTR Flag
XX
X
L
3FF
H(3)
Reset Right
INTR Flag
XX
X
L(3)
L
X
3FE
X
Set Left
INTL Flag
XL
L
3FE
H(2)
X
XXX
Reset Left
INTL Flag
2689 tbl 14
Inputs
Outputs
Function
CEL
CER
A0L-A9L
A0R-A9R
BUSYL(1)
BUSYR(1)
X
NO MATCH
H
Normal
H
X
MATCH
H
Normal
X
H
MATCH
H
Normal
L
MATCH
(2)
Write Inhibit
(3)
2689 tbl 15
相关PDF资料
PDF描述
7140LA25JGI 1K X 8 DUAL-PORT SRAM, 25 ns, PQCC52
IDT7140SA25PFGB HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM
IDT7140SA25PFGI HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM
IDT7140SA25TFG HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM
IDT7140SA25TFGB HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM
相关代理商/技术参数
参数描述
7140SA35C 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 5V 8K-Bit 1K x 8 35ns 48-Pin SBCDIP Tube 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 5V 8KBIT 1KX8 35NS 48PIN SBDIP - Bulk
7140SA35CB 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 5V 8K-Bit 1K x 8 35ns 48-Pin SBCDIP 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 5V 8K-Bit 1K x 8 35ns 48-Pin SBCDIP Tube 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 5V 8KBIT 1KX8 35NS 48PIN SBDIP - Bulk
7140SA35J 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
7140SA35J8 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray
7140SA35JI 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray