参数资料
型号: 71M6521FE-IM/F
厂商: Maxim Integrated
文件页数: 17/107页
文件大小: 0K
描述: IC ENERGY METER 32K FLASH 68-QFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 260
系列: Single Converter Technology®
测量误差: 0.4%
电源电压: 3 V ~ 3.6 V
测量仪表类型: 单相,双相
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 64-VFQFN 裸露焊盘
供应商设备封装: 64-QFN(7.5x7.5)
包装: 散装
71M6521DE/DH/FE Data Sheet
80515 MPU Core
The 71M6521DE/DH/FE includes an 80515 MPU (8-bit, 8051-compatible) that processes most instructions in one
clock cycle. Using a 5 MHz clock results in a processing throughput of 5 MIPS. The 80515 architecture eliminates
redundant bus states and implements parallel execution of fetch and execution phases. Normally a machine cycle is
aligned with a memory fetch, therefore, most of the 1-byte instructions are performed in a single cycle. This leads to
an 8x performance (in average) improvement (in terms of MIPS) over the Intel 8051 device running at the same clock
frequency.
Actual processor clocking speed can be adjusted to the total processing demand of the application (metering
calculations, AMR management, memory management, LCD driver management and I/O management) using the I/O
RAM register MPU_DIV[2:0] .
Typical measurement and metering functions based on the results provided by the internal 32-bit compute engine
(CE) are available for the MPU as part of the Teridian standard library. A standard ANSI “C” 80515-application
programming interface library is available to help reduce design cycle.
Memory Organization
The 80515 MPU core incorporates the Harvard architecture with separate code and data spaces.
Memory organization in the 80515 is similar to that of the industry standard 8051. There are three memory areas:
Program memory (flash), external data memory (XRAM), physically consisting of XRAM, CE DRAM, and I/O RAM,
and internal data memory (Internal RAM). Table 4 shows the memory map.
Address
(hex)
0000-7FFF
0000-3FFF
0000-1FFF
on 1K
boundary
0000-07FF
1000-11FF
2000-20FF
Memory
Technology
Flash Memory
Flash Memory
Static RAM
Static RAM
Static RAM
Memory Type
Non-volatile
Non-volatile
Volatile
Volatile
Volatile
Typical Usage
MPU Program and non-
volatile data
CE program
MPU data XRAM,
CE data
Configuration RAM
I/O RAM
Wait States
(at 5MHz)
0
0
0
6
0
Memory Size
(bytes)
32K
16K
8K
2K
2K
512
256
Table 4: Memory Map
Internal and External Data Memory: Both internal and external data memory are physically located on the
71M6521DE/DH/FE IC. “External” data memory is only external to the 80515 MPU core.
Program Memory: The 80515 can theoretically address up to 64KB of program memory space from 0x0000 to
0xFFFF. Program memory is read when the MPU fetches instructions or performs a MOVC operation.
After reset, the MPU starts program execution from location 0x0000. The lower part of the program memory includes
reset and interrupt vectors. The interrupt vectors are spaced at 8-byte intervals, starting from 0x0003.
External Data Memory: While the 80515 is capable of addressing up to 64KB of external data memory (0x0000 to
0xFFFF), only the memory ranges shown in Table 4: Memory Map
contain physical memory. The 80515 writes into external data memory when the MPU executes a MOVX @Ri,A or
MOVX @DPTR,A instruction. The MPU reads external data memory by executing a MOVX A,@Ri or MOVX
A,@DPTR instruction (SFR USR2 provides the upper 8 bytes for the MOVX A,@Ri instruction).
Clock Stretching: MOVX instructions can access fast or slow external RAM and external peripherals. The three low
order bits of the CKCON register define the stretch memory cycles. Setting all the CKCON stretch bits to one allows
access to very slow external RAM or external peripherals.
Table 5 shows how the signals of the External Memory Interface change when stretch values are set from 0 to 7. The
widths of the signals are counted in MPU clock cycles. The post-reset state of the CKCON register, which is in bold in
the table, performs the MOVX instructions with a stretch value equal to 1.
Rev 3
Page: 17 of 107
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