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参数资料
| 型号： | 71V016SA12PHGI8 |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | SRAM |
| 英文描述： | 64K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封装： | 0.400 INCH, ROHS COMPLIANT, TSOP2-44 |
| 文件页数： | 1/9页 |
| 文件大小： | 283K |
| 代理商： | 71V016SA12PHGI8 |
OCTOBER 2011
DSC-3834/11
1
2011 Integrated Device Technology, Inc.
Features
◆
64K x 16 advanced high-speed CMOS Static RAM
◆
Equal access and cycle times
— Commercial:10/12/15/20ns
— Industrial:12/15/20ns
◆
One Chip Select plus one Output Enable pin
◆
Bidirectional data inputs and outputs directly
LVTTL-compatible
◆
Low power consumption via chip deselect
◆
Upper and Lower Byte Enable Pins
◆
Single 3.3V power supply
◆
Available in 44-pin Plastic SOJ, 44-pin TSOP, and
48-Ball Plastic FBGA packages
Description
TheIDT71V016isa1,048,576-bithigh-speedStaticRAMorganized
as64Kx16.ItisfabricatedusingIDT’shigh-perfomance,high-reliability
CMOStechnology.Thisstate-of-the-arttechnology,combinedwithinno-
vativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-
speedmemoryneeds.
The IDT71V016 has an output enable pin which operates as fast
as 5ns, with address access times as fast as 10ns. All bidirectional
inputsandoutputsoftheIDT71V016areLVTTL-compatibleandoperation
is from a single 3.3V supply. Fully static asynchronous circuitry is used,
requiring no clocks or refresh for operation.
The IDT71V016 is packaged in a JEDEC standard 44-pin Plastic
SOJ, a 44-pin TSOP Type II, and a 48-ball plastic 7 x 7 mm FBGA.
Functional Block Diagram
Output
Enable
Buffer
Address
Buffers
Chip
Enable
Buffer
Write
Enable
Buffer
Byte
Enable
Buffers
OE
A0 –A15
Row / Column
Decoders
CS
WE
BHE
BLE
64K x 16
Memory
Array
Sense
Amps
and
Write
Drivers
16
Low
Byte
I/O
Buffer
8
I/O8
I/O15
I/O7
I/O0
3834 drw 01
High
Byte
I/O
Buffer
3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
IDT71V016SA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 71V016SA12PHI | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II Tube |
| 71V016SA12PHI8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II T/R |
| 71V016SA12YG | 功能描述:静态随机存取存储器 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| 71V016SA12YG8 | 功能描述:静态随机存取存储器 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| 71V016SA12YGI | 功能描述:静态随机存取存储器 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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