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参数资料
| 型号： | 71V016SA12PHGI8 |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | SRAM |
| 英文描述： | 64K X 16 STANDARD SRAM, 12 ns, PDSO44 |
| 封装： | 0.400 INCH, ROHS COMPLIANT, TSOP2-44 |
| 文件页数： | 7/9页 |
| 文件大小： | 283K |
| 代理商： | 71V016SA12PHGI8 |
6.42
7
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,4)
NOTES:
1. A write occurs during the overlap of a LOW CS, LOW BHE or BLE, and a LOW WE.
2. OE is continuously HIGH. If during a WE controlled write cycle OE is LOW, tWP must be greater than or equal to tWHZ+ tDW to allow the I/O drivers to turn off and data to be placed
on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is as short as the specified tWP.
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. IftheCS LOWor BHEandBLE LOWtransitionoccurssimultaneouslywithorafterthe WELOWtransition,theoutputsremaininahigh-impedancestate.
5. Transitionismeasured±200mVfromsteadystate.
Timing Waveform of Write Cycle No. 3 (BHE, BLE Controlled Timing)(1,4)
ADDRESS
CS
DATAIN
3834 drw 09
DATAIN VALID
tWC
tAS
(2)
tCW
tWR
WE
tAW
DATAOUT
tDW
tDH
BHE, BLE
tBW
tWP
ADDRESS
CS
DATAIN
3834 drw 10
DATAIN VALID
tWC
tAS
(2)
tCW
tWR
WE
tAW
DATAOUT
tDW
tDH
BHE, BLE
tBW
tWP
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 71V016SA12PHI | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II Tube |
| 71V016SA12PHI8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II T/R |
| 71V016SA12YG | 功能描述:静态随机存取存储器 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| 71V016SA12YG8 | 功能描述:静态随机存取存储器 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| 71V016SA12YGI | 功能描述:静态随机存取存储器 64Kx16 ASYNCHRONOUS 3.3V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
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