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参数资料
| 型号： | 74AHC1G07GW,125 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 7/11页 |
| 文件大小： | 0K |
| 描述： | IC BUFF N-INV OP/DRAIN 5TSSOP |
| 产品培训模块： | Logic Packages |
| 标准包装： | 1 |
| 系列： | 74AHC |
| 逻辑类型： | 缓冲器/线路驱动器，非反相并带开漏极 |
| 元件数： | 1 |
| 每个元件的位元数： | 1 |
| 输出电流高，低： | 8mA，8mA |
| 电源电压： | 2 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP（5 引线），SC-88A，SOT-353 |
| 供应商设备封装： | 5-TSSOP |
| 包装： | 标准包装 |
| 其它名称： | 568-7706-6 |
74AHC_AHCT1G07_6
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 06 — 7 June 2007
5 of 11
NXP Semiconductors
74AHC1G07; 74AHCT1G07
Buffer with open-drain output
11. Dynamic characteristics
[1]
Typical values are measured at VCC = 3.3 V.
[2]
Typical values are measured at VCC = 5.0 V.
[3]
CPD is used to determine the dynamic power dissipation PD (W).
PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts
Table 8.
Dynamic characteristics
Symbol
Parameter
Conditions
25
°C
40 °C to +85 °C 40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
Min
Max
For type 74AHC1G07
tPZL
OFF-state
to LOW
propagation
delay
A to Y; see Figure 5
VCC = 3.0 V to 3.6 V
CL = 15 pF
-
3.5
5.6
1.0
6.3
1.0
7.0
ns
CL = 50 pF
-
5.0
8.0
1.0
9.0
1.0
10.0
ns
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
2.5
3.9
1.0
4.6
1.0
4.9
ns
CL = 50 pF
-
3.6
5.5
1.0
6.5
1.0
7.0
ns
tPLZ
LOW to
OFF-state
propagation
delay
A to Y; see Figure 5
VCC = 3.0 V to 3.6 V
CL = 15 pF
-
5.8
7.9
1.0
8.4
1.0
8.9
ns
CL = 50 pF
-
8.3
11.5
1.0
12.0
1.0
12.5
ns
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
4.2
5.1
1.0
5.6
1.0
6.1
ns
CL = 50 pF
-
6.0
7.5
1.0
8.0
1.0
8.5
ns
CPD
power
dissipation
capacitance
per buffer;
CL = 50 pF; f = 1 MHz;
VI = GND to VCC
-5-
-
pF
For type 74AHCT1G07
tPZL
OFF-state
to LOW
propagation
delay
A to Y; see Figure 5
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
2.8
4.6
1.0
5.3
1.0
5.6
ns
CL = 50 pF
-
4.0
6.5
1.0
7.5
1.0
8.0
ns
tPLZ
LOW to
OFF-state
propagation
delay
A to Y; see Figure 5
VCC = 4.5 V to 5.5 V
CL = 15 pF
-
3.9
5.6
1.0
6.1
1.0
6.6
ns
CL = 50 pF
-
5.5
8.0
1.0
8.5
1.0
9.0
ns
CPD
power
dissipation
capacitance
per buffer;
CL = 50 pF; f = 1 MHz;
VI = GND to VCC
-
6.5
-
pF
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