参数资料
型号: 74AHC30
厂商: NXP Semiconductors N.V.
英文描述: 8-input NAND gate(8输入与非门)
中文描述: 8输入与非门(8输入与非门)
文件页数: 5/16页
文件大小: 75K
代理商: 74AHC30
1999 Nov 30
5
Philips Semiconductors
Product specification
8-input NAND gate
74AHC30; 74AHCT30
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
Notes
1.
2.
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For SO-packages: above 70
°
C the value of P
D
derates linearly with 8 mW/K.
For TSSOP-packages: above 60
°
C the value of P
D
derates linearly with 5.5 mW/K.
SYMBOL
PARAMETER
CONDITIONS
74AHC
74AHCT
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
V
I
V
O
T
amb
DC supply voltage
input voltage
output voltage
operating ambient
temperature
2.0
0
0
40
40
5.0
+25
+25
5.5
5.5
V
CC
+85
+125
100
20
4.5
0
0
40
40
5.0
+25
+25
5.5
5.5
V
CC
+85
+125
20
V
V
V
°
C
°
C
ns/V
see DC and AC
characteristics per device
t
r
,t
f
(
t/
f)
input rise and fall rates
V
CC
= 3.3
±
0.3 V
V
CC
= 5
±
0.5 V
SYMBOL
PARAMETER
CONDITIONS
MIN.
0.5
0.5
65
MAX.
UNIT
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
DC supply voltage
input voltage
DC input diode current
DC output diode current
DC output source or sink current
DC V
CC
or GND current
storage temperature
power dissipation per package
+7.0
+7.0
20
±
20
±
25
±
75
+150
500
V
V
mA
mA
mA
mA
°
C
mW
V
I
<
0.5 V; note 1
V
O
<
0.5 Vor V
O
> V
CC
+ 0.5 V; note 1
0.5 V < V
O
< V
CC
+ 0.5 V
for temperature range from
40 to +125
°
C; note 2
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